Formation of an Ordered Array of Nanocrystalline Si Dots by Using a Solution Droplet Evaporation Method

Tsuchiya, Yoshishige; Iwasa, Toshihiro; Tanaka, Atsushi; Usami, K.; Mizuta, Hiroshi; Oda, Shunri

doi:10.1557/proc-818-m11.51.1

Cited by 2 publications

(4 citation statements)

References 9 publications

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“…Second we tried to use a drop and evaporation technique [9] to assemble the nc-Si dots from the dispersion solution. We utilized lateral capillary meniscus force [10] which works at the point where the three phases of the liquid, air and nc-Si dot meet (see Fig.…”

Section: Methodsmentioning

confidence: 99%

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High-density assembly of nanocrystalline silicon quantum dots

Tanaka

Yamahata

Tsuchiya

et al. 2006

Current Applied Physics

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This paper reports on a new bottom-up technique of forming silicon nanostructures based on assembly of nanocrystalline (nc) Si dots from the solution. The nc-Si dots with a diameter of 8 ± 1 nm were fabricated by using VHF plasma decomposition of pulsed SiH 4 gas supply and deposited on the substrate randomly. We first studied the method of making the nc-Si dot dispersion solution by immersing the deposited wafer into various kinds of solvent with ultra sonic treatment. We found that methanol works as a suitable solvent for nc-Si dots. We then add a drop of the nc-Si dot solution onto other substrates and evaporated it. During the evaporation the nc-Si dots were assembled in the solution via the lateral capillary meniscus force which works as an attractive force between the dots. Use of SiO 2 substrate with good surface wettability with the solution was found vital to have the maximum meniscus force and to have two-dimensional assembly of the dots. The evaporation speed was carefully controlled via temperature and evaporation pressure to achieve high dot density assembly. In addition, we examined the assembly of the nc-Si dots on the silicon-on-insulator substrates with various kinds of nanoscale patterning and succeeded in making the nc-Si dots cluster bridging between the nanoelectrodes with a gap of as small as 20 nm.

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Section: Methodsmentioning

confidence: 99%

“…In this paper, we report on our recent progress of the solution drop and evaporation technique [9] for making the nc-Si dot arrays. We investigate both the type of solvent and substrate suitable for assembling the nc-Si dots efficiently from the solution.…”

Section: Introductionmentioning

confidence: 99%

High-density assembly of nanocrystalline silicon quantum dots

Tanaka

Yamahata

Tsuchiya

et al. 2006

Current Applied Physics

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“…We then take a drop of solution onto other clean Si substrate to observe if the nc-Si dots are indeed dispersed in the solution (see Fig.1). Second we tried to use a drop and evaporation technique [13] to assemble the nc-Si dots from the dispersion solution. We utilized lateral capillary meniscus force [14] which works at the point where the three phases of the liquid, air and nc-Si dot meet (see Fig.2).…”

Section: Methodsmentioning

confidence: 99%

“…In this paper, we report on our recent progress of the solution drop & evaporation technique [13] for making the nc-Si dot arrays. We investigate both the type of solvent and substrate suitable for assembling the nc-Si dots efficiently from the solution.…”

Section: Introductionmentioning

confidence: 99%

Assembly of nanocrystalline silicon quantum dots based on a colloidal solution method

Tanaka¹,

Yamahata²,

Tsuchiya³

et al.

5th IEEE Conference on Nanotechnology, 2005.

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-In this paper we propose and develop a new bottom-up approach to the formation of silicon nanostructures based on assembly of nanocrystalline (nc) Si dots from the colloidal solution. The nc-Si dots with a diameter of 8±1nm were fabricated by using VHF plasma decomposition of pulsed SiH 4 gas supply and deposited on the substrate randomly. For preparing the nc-Si dot colloidal solution, we first examined various kinds of solvent. The substrates on which the nc-Si dots deposited were immersed into the solvents, and ultra sonic treatment was applied for a few tens seconds. It was found that methanol works as a suitable solvent for nc-Si dots. The nc-Si dot solution was then condensed by evaporating the solvent a fraction. We dropped the nc-Si dot solution onto other substrates and evaporated it completely. We observed that the nc-Si dots were assembled in the solution via the lateral capillary meniscus force which works as an attractive force between the dots. Use of SiO 2 substrate with good surface wettability with the solution was found vital to have the maximum meniscus force and to have two-dimensional assembly of the dots. The evaporation speed was carefully controlled via temperature and evaporation pressure to achieve high dot density assembly. In addition, we examined the assembly of the nc-Si dots on the silicon-on-insulator substrates with various kinds of nanoscale patterning and succeeded in making the nc-Si dots cluster bridging between the nanoelectrodes with a gap of as small as 20 nm.Index Terms -nanocrystalline silicon, quantum dot, lateral capillary meniscus force, colloidal solution.

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Formation of an Ordered Array of Nanocrystalline Si Dots by Using a Solution Droplet Evaporation Method

Cited by 2 publications

References 9 publications

High-density assembly of nanocrystalline silicon quantum dots

High-density assembly of nanocrystalline silicon quantum dots

Assembly of nanocrystalline silicon quantum dots based on a colloidal solution method

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