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Abstract-This paper presents a theoretical analysis of harmonically terminated high-efficiency power rectifiers and experimental validation on a class-C single Schottky-diode rectifier and a class-F GaN transistor rectifier. The theory is based on a Fourier analysis of current and voltage waveforms, which arise across the rectifying element when different harmonic terminations are presented at its terminals. An analogy to harmonically terminated power amplifier (PA) theory is discussed. From the analysis, one can obtain an optimal value for the dc load given the RF circuit design. An upper limit on rectifier efficiency is derived for each case as a function of the device on-resistance. Measured results from fundamental frequency source-pull measurement of a Schottky diode rectifier with short-circuit terminations at the second and third harmonics are presented. A maximal device rectification efficiency of 72.8% at 2.45 GHz matches the theoretical prediction. A 2.14-GHz GaN HEMT rectifier is designed based on a class-F PA. The gate of the transistor is terminated in an optimal impedance for self-synchronous rectification. Measurements of conversion efficiency and output dc voltage for varying gate RF impedance, dc load, and gate bias are shown with varying input RF power at the drain. The rectifier demonstrates an efficiency of 85% for a 10-W input RF power at the transistor drain with a dc voltage of 30 V across a 98-resistor.

Abstract-This paper presents an ultracompact antenna design suited for digital video broadcasting-handheld (DVB-H) reception devices. The DVB-H frequency band is ranging from 470 to 862 MHz and divided in 49 channels of 8 MHz. Designed to be integrated in a tablet, it is not only heavily miniaturized ( at 470 MHz), but also able to cover each channel thanks to the use of a magneto-dielectric material. The advantage of using such a material is studied and described in this paper. Moreover, the operating frequency is continuously tuned over the whole DVB-H band by the integration of a varactor diode. This varactor diode has been characterized and modeled to properly cosimulate its behavior within the antenna. Limitations in terms of accepted power by the diode are emphasizing. Finally, the antenna design, including both magneto-dielectric material and varactor diode is integrated in the DVB-H receiver device. Measurement performances are presented and discussed.Index Terms-Digital video broadcasting-handheld (DVB-H), frequency tunable antenna, magneto-dielectric material, miniature antenna, pattern diversity, varactor diode.

International audienc

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A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

International audienceThe present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (Key Organisation for Research in Integrated Circuits in GaN technology). The KorriGaN project (200509) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed S parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters)