A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

International audienceWe present here a new set of equations for modeling the IV characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology is used for several applications in a T/R module. It can even be used for switches design, which is the most demanding application in terms of IV swing. Moreover, particular care was taken to accurately model the first third orders of the current derivatives, which is important for multione applications. We also focused on an accurate definition of the nonlinear elements such as capacitances for power applications. There are 18 parameters for the main current source (and six for both diodes Igs and Igd). This can be compared to Tajima's equations-based model (13 parameters) or to the Angelov model (14 parameters), which only fit the IV characteristics for positive values of Vds. We will detail here the model formulation, and show some measurements/modeling comparisons on both IV, S-parameters and temporal load-pull obtained for a 8 75 m GaN HEMT, with 0.25 m gate length

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This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent PAE associated to very high power in MMIC technology is still challenging. In this work, we present State-of-the-Art results on AlGaN/GaN MMIC amplifiers. An output power of 43W with 52% of PAE was achieved at 10.5 GHz showing that high power associated with high PAE can be obtained at X-band using MMIC GaN technology.

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