State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

Piotrowicz, S.; Morvan, E.; Aubry, R.; Bansropun, S.; Bouvet, Thomas; Chartier, E.; Dean, Tim; Drisse, O.; Dua, C.; Floriot, D.; Poisson, M. A.; Gourdel, Y.; Hydes, A.J.; Jacquet, Jean-Claude; Jardel, Olivier; Lancereau, D.; McLean, J.O.; Lecoustre, G.; Martin, A.L.; Ouarch, Z.; Reveyrand, Tibault; Richard, M.A.; Sarazin, N.; Thenot, D.; Delage, S.

doi:10.1109/csics.2008.39

Cited by 37 publications

(17 citation statements)

References 11 publications

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“…-The vast majority of contributions use microstrip MMICs. The realizations with output powers above 10 W [6,[9][10][11] state overall PAE values in the range 40% to 50%. All of them were measured in pulsed mode with low duty cycle while our results refer to cw conditions.…”

Section: Discussionmentioning

confidence: 99%

“…In the last few years, various GaN MMIC power amplifiers have been reported (e.g. [4][5][6][9][10][11][12]). While among the first presented X-band GaN MMIC PAs both coplanar and microstrip variants exist [4,5], almost all PAs published later were designed in microstrip and all current state-of-the-art X-band MMIC PAs are microstrip versions [10,13].…”

Section: Introductionmentioning

confidence: 99%

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Potential of Coplanar X-band GaN-MMIC Power Amplifiers

et al. 2014

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While the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH 4-inch GaN-on-SiC technology with 0.25 µm-gate GaN HEMTs. The two-stage power amplifier circuit delivers more than 12 W cw output power at 10 GHz, with a large-signal gain of 20 dB and a final stage drain efficiency of 45%. Benchmarking shows that these are best-in-class values for a coplanar X-band MMIC, which come very close to the state-of-the-art microstrip counterparts.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Potential of Coplanar X-band GaN-MMIC Power Amplifiers

et al. 2014

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“…While many results have been already reported with PAE up to 67% with lower output power, this paper reports a PAE of 52% with 43W of output power showing that high power and high PAE can be achieved at X-band using GaN technology. PAE (%) [7] [this paper] In this paper we present results obtained on X-band MMIC amplifiers using AlGaN/GaN HEMT 0.25µm gate length technology developed in the frame of the European KORRIGAN contract.…”

Section: Amplifier Results -Batchmentioning

confidence: 99%

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

Piotrowicz¹,

Ouarch²,

Chartier³

et al. 2010

2010 IEEE MTT-S International Microwave Symposium

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“…Typical examples are 3 rd generation microwave communication base stations and military radar applications [1]. High-power-amplifier (HPA) MMIC results with output power levels of 50 W at X-band [2] have been demonstrated. However, the demonstration of multistage MMICs with high-efficiency operation at a PAE level of 40%, high bandwidth of 3 GHz, and high power gain of ≥17 dB under realistic operating conditions is so far rare [3].…”

Section: Introductionmentioning

confidence: 98%

Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency

Kuhn

Raay

Quay

et al. 2009

J Infrared Milli Terahz Waves

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The design, realization and characterization of dual-stage X-band highpower and highly-efficient monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) is presented. These high power amplifiers (HPAs) are based on a precise investigation of circuit-relevant HEMT behavior using two different field-plate variants and its effects on PA performance as well as optimization of HPA driver stage size which also has a deep impact on the entire HPA. Two broadband (3 GHz) MMICs with different field-plate variants and two narrowband (1 GHz) PAs with different driverto final-stage gate-width ratio are realized with a maximum output power of 19-23 W, a maximum power-added efficiency (PAE) of ≥40%, and an associated power gain of 17 dB at X-band. Furthermore, two 1 mm test transistors of the same technology with the mentioned field-plate variants and a 1 mm test MMIC support VSWR-ratio tests of 6:1 and 4:1, respectively.

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State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

Cited by 37 publications

References 11 publications

Potential of Coplanar X-band GaN-MMIC Power Amplifiers

Potential of Coplanar X-band GaN-MMIC Power Amplifiers

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers

Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency

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