An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Jardel, Olivier; Groote, Fabien de; Reveyrand, Tibault; Jacquet, J.; Charbonniaud, C.; Teyssier, Jean-Pierre; Floriot, D.; Quéré, Raymond

doi:10.1109/tmtt.2007.907141

Cited by 252 publications

(117 citation statements)

References 12 publications

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“…The maximum power obtained is 3.5 W/mm with a PAE of 51% at V ds ¼ 15 V and 6.6 W/mm with a PAE of 39% at V ds ¼ 30 V. The devices showed almost no ageing at V ds ¼ 15, 20, and 25 V during the whole measurement campaign. The weak impact of the trapping effects can be attested by the limited decrease of the mean drain current in function of the input power before the gain compression, as explained in [14]. Moreover, it has to be underlined that despite the fact that the technology is still under development, we noted a very high reproducibility of the measurements performed on several devices of the wafer.…”

Section: B) Cw Measurements At 10 Ghzmentioning

confidence: 68%

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Jardel

Callet

Dufraisse

et al. 2011

Int. J. Microw. Wireless Technol.

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A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

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Section: B) Cw Measurements At 10 Ghzmentioning

confidence: 68%

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Jardel

Callet

Dufraisse

et al. 2011

Int. J. Microw. Wireless Technol.

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“…Those measurements like the one shown in fig-6 allow to better determine the time constants associated with those trapping effects in a model like the one proposed in [18]. However examination of the curves given in fig-6 shows that those time constants are highly dependent to the drain voltage bias.…”

Section: B Small Signal Frequency Dispersion Of Algan/gan Hemtsmentioning

confidence: 99%

Low frequency parasitic effects in RF transistors and their impact on power amplifier performances

Quéré

Sommet

Bouysse

et al. 2012

WAMICON 2012 IEEE Wireless &Amp; Microwave Technology Conference

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Abstract-In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers.

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“…A previous large signal model including a description of the trapping effects [5] was able to the reproduce the dynamics of the trapping effects versus the swings of the command voltages V gs and V ds , i.e. by extension versus the input power and the load impedances during CW load-pull measurements.…”

Section: Modeling and Consistency Validationsmentioning

confidence: 99%

Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs

Jardel

Laurent

Reveyrand

et al. 2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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Abstract-We propose here a non-linear GaN HEMT model for CAD including a trapping effects description consistent with both small-signal and large-signal operating modes. It takes into account the dynamics of the traps and then allows to accurately model the modulated large signal characteristics that are encountered in telecommunication and radar signals. This model is elaborated through low-frequency S-parameter measurements complementary to more classical pulsed-IV characterizations. A 8x75µm AlInN/GaN HEMT model was designed and particularly validated in large-signal pulsed RF operation. It is also shown that thermal and trapping effects have opposite effects on the output conductance, thus opening the way for separate characterizations of the two effects.

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An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Cited by 252 publications

References 12 publications

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

Low frequency parasitic effects in RF transistors and their impact on power amplifier performances

Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs

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