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In this paper, we have successfully crystallized the amorphous silicon thin films on flexible thin glass of 100 μm by adopting blue-multi-diode-laser annealing. The crystallized films on flexible thin glass showed high crystallinity and good electrical properties as well as on the conventional thick glass with the thickness of 0.7 mm.

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The microcrystalline phase obtained by adopting a two-step rapid thermal annealing (RTA) process for rf-sputtered silicon films deposited on thermally durable glass was characterized. The optical properties, surface morphology, and internal stress of the annealed Si films are investigated. As the thermally durable glass substrate allows heating of the deposited films at high temperatures, micro-polycrystalline silicon (micro-poly-Si) films of uniform grain size with a smooth surface and a low internal stress could be obtained after annealing at 750 °C. The thermal stress in the Si films was 100 times lower than that found in the films deposited on conventional glass. Uniform grains with an average grain size of 30 nm were observed by transmission electron microscopy (TEM) in the films annealed at 800 °C. These micro-poly-Si films have potential application for fabrication of uniform and reliable thin film transistors (TFTs) for large scale active-matrix organic light emitting diode (AMOLED) displays.

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The thermal durability of Jade@ glass for poly‐Si and conventional glass for a‐Si were investigated for the rapid thermal annealing (RTA) process. The average roughness (Ra) of poly‐Si film on Jade glass after annealing at 850 °C for 1 hour was around 0.5 nm, significantly smoother than that of a‐Si glass. The internal stress of poly‐Si film on Jade glass by 750 °C annealing temperature is lower with results of ∼103 MPa compared to ∼105 MPa of a‐Si glass. The thermal durability of glass for RTA process is associated with the annealing point of glass.

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