Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode

Mugiraneza, Jean de Dieu; Miyahira, Tomoyuki; Sakamoto, Akinori; Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Itoh, Taketsugu

doi:10.1143/jjap.49.121302

Cited by 5 publications

(2 citation statements)

References 16 publications

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“…The number of Ar inclusion in the film is speculated to be reduced by adjusting the pressure. 16,17) Then, Si films were deposited on PI substrates under the condition of 7 mTorr pressure.…”

Section: Resultsmentioning

confidence: 99%

Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing

Okada¹,

Mugiraneza²,

Shirai³

et al. 2012

Jpn. J. Appl. Phys.

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Si thin film coated on a flexible polyimide (PI) substrate was successfully crystallized by blue multi-laser diode annealing (BLDA) in the CW mode. The precursor Si film of 50 nm thickness was stably deposited at room temperature using a radio-frequency (RF) sputtering machine. Subsequently, a blue (445 nm) laser beam of 1.1 W was irradiated onto the Si film at a scan speed of 500 mm/s. After irradiation, neither damage to the substrate nor degradation of the Si film surface was observed, and the Si surface was kept smooth within 4.2 nm (RMS). By Raman peak shift at 520 cm-1 and transmission electron microscope (TEM) observation, the crystalline fraction of 100% was estimated in spite of the presence of micro-grains of ∼50 nm in diameter. The BLDA allows the realization of ultra-low temperature polycrystalline silicon (poly-Si) and is suitable for the next-generation system on panel (SoP).

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Section: Resultsmentioning

confidence: 99%

Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing

Okada¹,

Mugiraneza²,

Shirai³

et al. 2012

Jpn. J. Appl. Phys.

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“…RTP or rapid thermal annealing (RTA) allows the nucleation process to occur at temperatures near the melting point of Si without melting the Silica glass substrate. It is well demonstrated that the nucleation rate is low near the melting point of Si; hence grain sizes obtained with RTA are generally larger [27,28].…”

Section: Recrystallization and Annealing Of Deposited Si Thin Filmsmentioning

confidence: 99%

Growth and Characterization of Polycrystalline Silicon Thin Films for Photocatalytic Splitting of Water in Oxide-Si Tandem Cells

Ali¹,

Zahid²,

Hasan³

et al. 2020

Preprint

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With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen.This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO2 tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, X-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions were drawn to ascertain the best possible deposition parameters of n-Si for photocatalytic water splitting.

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Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature

Okugawa

Nakamura

Ishimaru

et al. 2016

Journal of Applied Physics

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The structure of amorphous Ge (a-Ge) films prepared by sputter-deposition and the effects of aging at ambient temperature and pressure were studied by pair-distribution-function (PDF) analysis from electron scattering and molecular dynamics simulations. The PDFs of the as-deposited and aged samples for 3–13 months showed that the major peaks for Ge-Ge bonds decrease in intensity and broaden with aging for up to 7 months. In the PDFs of a-Ge of molecular dynamics simulation obtained by quenching liquid at different rates, the major peak intensities of a slowly cooled model are higher than those of a rapidly cooled model. Analyses on short- and medium-range configurations show that the slowly cooled model includes a certain amount of medium-range ordered (MRO) clusters, while the rapidly cooled model includes liquid-like configurations rather than MRO clusters. The similarity between experimental and computational PDFs implies that as-deposited films are similar in structure to the slowly cooled model, whereas the fully aged films are similar to the rapidly cooled model. It is assumed that as they undergo room-temperature aging, the MRO clusters disintegrate and transform into liquid-like regions in the same matrix. This transition in local configurations is discussed in terms of instability and the non-equilibrium of nanoclusters produced by a vapor-deposition process.

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Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode

Cited by 5 publications

References 16 publications

Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing

Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing

Growth and Characterization of Polycrystalline Silicon Thin Films for Photocatalytic Splitting of Water in Oxide-Si Tandem Cells

Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature

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