P‐140L: <i>Late‐News Poster</i>: Crystallization of Amorphous Silicon Films on Flexible Glass by Blue‐Multi‐Diode‐Laser Annealing as a New LTPS

Noguchi, Takashi; Nishinohara, Takuma; Mugiraneza, Jean de Dieu; Shirai, Kokoro; Okada, Tatsuya; Itoh, Taketsugu

doi:10.1002/j.2168-0159.2012.tb05992.x

Cited by 5 publications

(5 citation statements)

References 1 publication

(2 reference statements)

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“…In conclusion, the promotion of every technical elements should be considered as the sufficient condition for the development of LCD technology [11].…”

Section: Thin Film Transistor Technologymentioning

confidence: 99%

21.1: Invited Paper: Development Trend of LCD Technology

Feng

Sun

Zhang

et al. 2018

Symp Digest of Tech Papers

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Recent strong requirement of higher image quality for LCDs are more important than ever along with improvement of transmission technologies such as 8K TV, 5G, and so on. This paper introduces BOE's development trend of LCDs including technical element, and design trend. The impressive influences of LCD in people's modern digital live force panel makers such as BOE to ponder on the development of LCD technology. How should the LCD become more vivid and more accepted by the user? When the 8K display and the age of 5G are coming, how should LCD undertake its historical responsibility in the ecosystem of the Internet of things? The development trend of LCD through technical elements and design elements are summarized below. LCD will become more and more magnificent.

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“…In conclusion, the promotion of every technical elements should be considered as the sufficient condition for the development of LCD technology [11].…”

Section: Thin Film Transistor Technologymentioning

confidence: 99%

21.1: Invited Paper: Development Trend of LCD Technology

Feng

Sun

Zhang

et al. 2018

Symp Digest of Tech Papers

View full text Add to dashboard Cite

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“…One of the biggest features of laser annealing is that heat treatment can be conducted in an instant time. The laser annealing process is considered to be a very effective mean for shallow junction formation [5,6].…”

Section: New Process Conceptmentioning

confidence: 99%

A laser annealing process for high-performance power MOSFETs

Chen

Noguchi

2014

2014 International Workshop on Junction Technology (IWJT)

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We propose a new laser annealing process for forming P-Base-Junction (Here, P represents the type of impurity) in the trench gate power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). An equivalent shallow junction structure for P-Base-Junction with uniform impurity distribution is achieved by the green laser annealing process of pulse mode. By comparing the laser annealing with conventional RTA (Rapid Thermal Annealing), lower sheet resistance and higher impurity activation in the shallow junction have been confirmed.

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“…4) Excimer laser annealing (ELA) is widely used for the crystallization of amorphous silicon films to form the polysilicon layers for high-resolution displays on glass or the ultra shallow junction in finepatterned MOSFETs for advanced MOS LSIs. [5][6][7] Recently, as laser annealing has attracted attention in and drawn interest to the power semiconductor community for its possible applications, we have also reported an application of green laser annealing process in power MOSFET. 8) In particular, the research on anode activation in processing the back of insulated gate bipolar transistors (IGBTs) is being actively conducted.…”

Section: Introductionmentioning

confidence: 99%

Excimer laser annealing for low-voltage power MOSFET

Chen

Okada

Noguchi

et al. 2016

Jpn. J. Appl. Phys.

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Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

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P‐140L: Late‐News Poster: Crystallization of Amorphous Silicon Films on Flexible Glass by Blue‐Multi‐Diode‐Laser Annealing as a New LTPS

Cited by 5 publications

References 1 publication

21.1: Invited Paper: Development Trend of LCD Technology

21.1: Invited Paper: Development Trend of LCD Technology

A laser annealing process for high-performance power MOSFETs

Excimer laser annealing for low-voltage power MOSFET

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