Excimer laser annealing for low-voltage power MOSFET

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

doi:10.7567/jjap.55.086503

Cited by 3 publications

(4 citation statements)

References 15 publications

(16 reference statements)

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“…In contrast to numerous experiments exploring the effects of multiple laser pulses on implanted B in crystalline Si [19,20,21,22,23,33], there is no initial doping profile present in this investigation, because we used a thin sputter-deposited B layer on top of the wafer as dopant source. To model this source, a finite-volume grid element outside the Si surface acts as a finite dopant source [34], from which B atoms diffuse into the first Si element during melting.…”

Section: Numerical Simulationmentioning

confidence: 99%

“…However, the solute trapping mechanism alone cannot explain the distinct B accumulation (pile-up) at the maximum melt depth, which was observed in several investigations on laser melt annealing of Si wafers with implanted B profiles [19,20,21,22,23]. Additionally, experiments [24,25] with B sources deposited on top of a Si wafer and repeated laser melting cycles (e.g., in a laser doping setting) also yielded dopant profiles exhibiting B accumulation effects.…”

Section: Introductionmentioning

confidence: 99%

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Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

2017

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Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient kp above unity with kp=1.25±0.05 and thermally-activated diffusivity DB, with a value DB(1687K)3.33333pt=3.33333pt(3.53±0.44)3.33333pt×3.33333pt10−4 cm2·s−1 of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.

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Section: Numerical Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

2017

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“…Additionally, laser annealing is a type of localized annealing that has been widely studied in device preparation because of its advantages, such as fast annealing speed, low heat accumulation, selectable annealing region, localized thermal effect, and good spatial resolution [ 28 , 29 ]. However, this treatment is almost exclusively used in inorganic materials, and laser annealing treatment is hardly used in devices prepared based on organic materials due to their low heat resistance and poor stability [ 30 , 31 , 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing

Huang,

Liu,

Bao

et al. 2024

Materials

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Organic semiconductors (OSCs), especially small molecule semiconductors, have received increasing attention due to their good designability and variability. Phase transitions and interfacial properties have a decisive influence on device performance. Here, 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) devices are treated with low-power laser annealing, which is able to avoid the influence of the dewetting effect on the hole mobility of organic semiconductor materials. Ultraviolet ozone treatment and self-assembled monolayer treatment can improve the performance and stability of the device. Moreover, after low-temperature thermal annealing, the hole mobility of the device can even reach as high as 4.80 cm2 V−1 s−1, and we tested the optical response of the device to the ultraviolet wavelength and found that its maximum optical responsivity was 8.2 AW−1.

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“…Laser thermal annealing is an ultrafast and low thermal budget process solution for the passivation of backside illuminated sensors and power devices. Laser annealing can be a solution for the backside contact of those chips with a vertical flow of electrical current, where an ohmic contact and/or collector on the wafer backside are required [9,10], including SiC power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) [11], Insulated Gate Bipolar Transistor (IGBT) [12], and high voltage diodes [13,14]. Moreover, this process can also be useful for the ohmic contact formation process in SiC Schottky diodes, causing a negligible impact on the device's front side [15,16].…”

Section: Introductionmentioning

confidence: 99%

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Arduino,

Stassi,

Spano

et al. 2023

Materials

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Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Silicon finds extensive use in diverse applications, including microelectronics and solar cells, while SiC serves as a crucial material for developing components designed to operate in challenging environments or high-power integrated devices. The review commences with an exploration of the underlying theory and fundamentals of laser annealing techniques. It then delves into an analysis of the most pertinent studies focused on the crystallization of these two semiconductor materials.

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Excimer laser annealing for low-voltage power MOSFET

Cited by 3 publications

References 15 publications

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

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