We designed, prototyped, and evaluated LCD integrated with a gate driver and a source driver using amorphous In-Ga-Zn-Oxide TFTs having bottom-gate bottom-contact structure, thereby obtaining TFTs with superior characteristics.Then, we prototyped the world's first 4-inch QVGA LCD and integrated the gate driver and source driver on the display panel.
We designed, prototyped, and evaluated a liquid crystal panel integrated with a gate driver and a source driver using amorphous In-Ga-Zn-oxide thin film transistors (TFTs). Using bottom-gate bottom-contact (BGBC) thin film transistors, superior characteristics could be obtained. We obtained TFT characteristics with little variation even when the thickness of the gate insulator (GI) film was reduced owing to etching of source/ drain (S/D) wiring, which is a typical process for the BGBC TFT. Moreover, a favorable ON-state current was obtained even when an In-Ga-Znoxide layer was formed over the S/D electrode. Since the upper portion of the In-Ga-Zn-oxide layer is not etched, the BGBC structure is predicted to be effective in thinning the In-Ga-Zn-oxide layer in the future. Upon evaluation, we found that the prototyped liquid crystal panel integrated with the gate and source drivers using the TFTs with improved characteristics had stable drive.
-A prototype 13.3-inch 8k4k 664-ppi high-resolution foldable organic light emitting diode display is constructed. C-axis aligned a-b-plane-anchored crystal In-Ga-Zn oxide field effect transistors designed using a 1.5-μm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current.
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