Development of Liquid Crystal Display Panel Integrated with Drivers Using Amorphous In–Ga–Zn-Oxide Thin Film Transistors

Abstract

We designed, prototyped, and evaluated a liquid crystal panel integrated with a gate driver and a source driver using amorphous In-Ga-Zn-oxide thin film transistors (TFTs). Using bottom-gate bottom-contact (BGBC) thin film transistors, superior characteristics could be obtained. We obtained TFT characteristics with little variation even when the thickness of the gate insulator (GI) film was reduced owing to etching of source/ drain (S/D) wiring, which is a typical process for the BGBC TFT. Moreover, a favorable ON-state current was obtained even when an In-Ga-Znoxide layer was formed over the S/D electrode. Since the upper portion of the In-Ga-Zn-oxide layer is not etched, the BGBC structure is predicted to be effective in thinning the In-Ga-Zn-oxide layer in the future. Upon evaluation, we found that the prototyped liquid crystal panel integrated with the gate and source drivers using the TFTs with improved characteristics had stable drive.

Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors

“…[1][2][3] Amorphous phase In-Ga-Zn-O (IGZO) is one of the most typical oxide TFTs compositions due to its relatively high field-effect mobility (l FE ) and superior uniformity. [1][2][3] Amorphous phase In-Ga-Zn-O (IGZO) is one of the most typical oxide TFTs compositions due to its relatively high field-effect mobility (l FE ) and superior uniformity.…”

A novel field‐sequential blue‐phase‐mode AMLCD

“…The use of amorphous In-Ga-Zn-oxide as a semiconductor layer along with crystalline In-Ga-Zn-oxide have long been researched for a long time, and its crystal structure has became widely known. [12][13][14][15][16][17][18][19][20][21][22] The layer comprised of In-Ga-Zn-oxide we used this time has a crystallinity that cannot be seen in an amorphous oxide semiconductor. Figures 16 and 17 show planar and cross-sectional TEM images of an amorphous In-Ga-Zn-oxide film and our In-Ga-Zn-oxide film, and these TEM images of our In-Ga-Zn-oxide film indicate that the crystallinity has an atomic order that shows c-axis alignment.…”

Ferroelectric Copolymer-Based Plastic Memory Transistors

“…The oxide semiconductor-based TFTs present such beneficial features as high field-effect mobility, excellent uniformity, and robust device stability (Hoshino K. et al, 2009;Jeong J. K. et al, 2008;Nomura et al, 2004). As results, the oxide TFTs have attracted huge interest as one of the most promising backplane device technologies for the next-generation liquid-crystal display (LCD) (Osada T. et al, 2010) or organic light-emitting diode display (OLED) (Ohara H. et al, 2010;Park J. S. et al, 2009) with a large size and a high resolution. A transparency of the oxide semiconductor to the visible light can be another benefit of expanding the applications to the transparent electronic devices (Park S. H. et al, 2009).…”