The characteristic variation of an exposure pattern with various optical
parameters is calculated in a typical cell-projection lithography system by
using an electron trajectory simulation. The Coulomb interaction effect
among electrons in the beam is calculated which determines the pattern blur
at the wafer surface. The acceleration voltage is 50 kV, the exposure pattern
is a series of line and space, and the field size is
5 µm×5 µm. As the beam
current density varies from 2 to 13 A/cm2 at the specimen surface, the pattern
blur is evaluated in parameters of (1) the probability of electrons to be in the
designed pattern, (2) the full width at half maximum and (3) the contrast of the
electron density distribution at the wafer surface, as the line width varies
from 0.13 to 0.2 µm.
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