Development of a Simulator for Cell-projection Type Electron Beam Lithography.

Simulation of time-dependent charging of resist on Si under electron-beam irradiation

“…[3][4][5] On the other hand, because of the high production rate of carriers along the primary EB path in a thin insulator, electron charge may be released by the EBinduced current to the substrate, even if the charging is built. The specimen surface can be charged positively, because the number of outgoing electrons is always more than that of the incoming electrons at the specimenvacuum boundary.…”

“…[8][9][10] In the present study, the simulation model given previously [3][4][5] is applied to the present boundary condition, and the timedependent charging mechanisms of an electrically insulating resist film on a Si substrate under EB irradiation are proposed. [8][9][10] In the present study, the simulation model given previously [3][4][5] is applied to the present boundary condition, and the timedependent charging mechanisms of an electrically insulating resist film on a Si substrate under EB irradiation are proposed.…”