We present a possibility to model morphology of surfaces of nanostructured semiconductor films by use of methods of nonlinear physics. We also describe experimental photoluminescence and absorption spectra in nanostructured fractal medium. By use of our theory we describe the new experimental fact of light localization in non-crystalline films. We suggest a fractal model for energy spectra of excitons in nanostructured semiconductors with porous structure. We obtain equations for exciton and multi-exciton energy depending on energy of exciting photon.
This work has been done to identify quantitative criteria the degree of order and chaos morphology of porous layers consisting of silicon nanowire arrays. In order to fulfill the
work, a method of using metal-assisted chemical etching has been utilized to produce
nanowires. There has been done a work of digital processing of porous film images which were extracted by scanning electron microscope. Informational-entropic and Fourier analysis have been applied to quantitatively describe the degree of order and chaos in nanostructure distribution in the layers. Self-similarity of the layer morphology has been quantitatively described via its fractal dimensions by correlation method. The applied approach for image processing allows us to distinguish the morphological features of as-called "black" (more ordered) and "white" (less ordered) silicon layers, which are characterized by minimal and maximal optical reflection, respectively. From all of the methods of digital techniques that we have used the method for determining the conditional information of a chaotic set was proved to be the most informative.
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