Morphology and Electrical Properties of Silicon Films with Vertical Nanowires

Zhanabaev, Z. Zh.; Grevtseva, T.Yu.; Ibraimov, M.K.

doi:10.1166/jctn.2016.4849

Cited by 3 publications

(2 citation statements)

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“…In fact, por-Si can be obtained by electrochemical etching in an electrolyte with hydrofluoric (HF) acid by applying an electric current to the silicon wafer (Zhang & Braun, 2012). Such parameters as the current density of the electrochemical process, the etching time, and also the correctly selected concentration of liquids in the electrolyte make it possible to precisely control the structure of silicon and the thickness of the nanostructured layer (Ahmed & Mehaney, 2019;Zhanabaev et al, 2016).…”

Section: Public Interest Statementmentioning

confidence: 99%

High sensitive NH₃ sensor based on electrochemically etched porous silicon

et al. 2020

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In the current study, porous silicon (por-Si) samples were fabricated by electrochemical etching at different times (20 min, 40 min, 60 min). Scanning electron microscope (SEM) images of horizontal cross-sections of the samples showed the formation of pores. The etched samples' porosity was determined by the gravimetric method and amounted to 59.5%, 72.7%, 83.3%, respectively. Optical characteristics such as Raman spectra and photoluminescence (PL) spectra were obtained. The current-voltage and capacitance-voltage characteristics were also measured to calculate the sensitivity of the samples. The study results show that sample, which is etched for 40 minutes has a maximum response value to ammonia (NH 3 ) gas than others, and the sensitivity is 33.25. The results demonstrated that it is possible to develop a high sensitive sensor device based on por-Si for determining NH 3 gas in concentrations below 0.1 ppm at room temperature.

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Section: Public Interest Statementmentioning

confidence: 99%

High sensitive NH₃ sensor based on electrochemically etched porous silicon

et al. 2020

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“…Image Processing and Earth Remote Sensing Z Zh Zhanabaev, T Yu Grevtseva, K A Gonchar, G K Mussabek, D Yermukhamed, A A Serikbayev, R B Assilbayeva, A Zh Turmukhambetov and V Yu Timoshenko Nanocluster semiconductor films, including porous layers of silicon nanowire (SiNWs) grown in non-equilibrium conditions have scale-invariant, hierarchically self-similar, i.e. fractal and multifractal structure [10][11][12][13]. The scale invariance of a SiNW film is in their self-similarity (similarity coefficients on different variables are equal to each other) and self-affinity (similarity coefficients are different on different variables, that corresponds to anisotropic structure of the film).…”

Section: Introductionmentioning

confidence: 99%

Nonlinear analysis of the degree of order and chaos of morphology of porous silicon nanostructures

Zhanabaev

Grevtseva

Gonchar

et al. 2019

Proceedings of the v International Conference Information Technology and Nanotechnology 2019

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This work has been done to identify quantitative criteria the degree of order and chaos morphology of porous layers consisting of silicon nanowire arrays. In order to fulfill the work, a method of using metal-assisted chemical etching has been utilized to produce nanowires. There has been done a work of digital processing of porous film images which were extracted by scanning electron microscope. Informational-entropic and Fourier analysis have been applied to quantitatively describe the degree of order and chaos in nanostructure distribution in the layers. Self-similarity of the layer morphology has been quantitatively described via its fractal dimensions by correlation method. The applied approach for image processing allows us to distinguish the morphological features of as-called "black" (more ordered) and "white" (less ordered) silicon layers, which are characterized by minimal and maximal optical reflection, respectively. From all of the methods of digital techniques that we have used the method for determining the conditional information of a chaotic set was proved to be the most informative.

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Silicon and germanium nanostructures formed by spark discharge plasma

Yakunin

Presnov

Stepikhova

et al. 2019

J. Phys.: Conf. Ser.

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Formation of semiconductor nanostructures on the surface of single crystalline silicon and germanium wafers by spark discharge plasma in air was investigated. The prepared nanostructures were analyzed by means of the scanning and transmission electron microscopy and optical spectroscopy of the photoluminescence and Raman scattering. The formed nanostructures exhibit a fractal-like morphology with interconnected nanocrystals of 2-200 nm sizes that is explained by repeated processes of spark ablation and subsequent condensation. While the size and morphology of the nanostructure depend on power sources of the spark discharge, short interaction times of spark discharge plasma and target determine a relatively low efficiency of the chemical oxidation of germanium and silicon, as well as low ionic temperatures of the plasma.

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Morphology and Electrical Properties of Silicon Films with Vertical Nanowires

Cited by 3 publications

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High sensitive NH₃ sensor based on electrochemically etched porous silicon

High sensitive NH₃ sensor based on electrochemically etched porous silicon

Nonlinear analysis of the degree of order and chaos of morphology of porous silicon nanostructures

Silicon and germanium nanostructures formed by spark discharge plasma

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Morphology and Electrical Properties of Silicon Films with Vertical Nanowires

Cited by 3 publications

References 0 publications

High sensitive NH3 sensor based on electrochemically etched porous silicon

High sensitive NH3 sensor based on electrochemically etched porous silicon

Nonlinear analysis of the degree of order and chaos of morphology of porous silicon nanostructures

Silicon and germanium nanostructures formed by spark discharge plasma

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Product

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About

High sensitive NH₃ sensor based on electrochemically etched porous silicon

High sensitive NH₃ sensor based on electrochemically etched porous silicon