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Excellent characteristics of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with long and narrow grains aligned one-dimension have been experimentally clarified for the first time. The field effect mobility and on-off transition slope of n-channel and p-channel devices were as high as 685 cm 2 V À1 s À1 and 190 mV/decade and 145 cm 2 V À1 s À1 and 104 mV/ decade, respectively. Fluctuations of characteristics were considerably reduced by widening the channel, and uniform characteristics were observed when there were approximately twenty long grains within the channel. These results were obtained when the TFT channel was formed within a region free from grain boundaries formed by head-on collision of laterally growing grains and seeds used to initiate lateral grain growth. Material properties are discussed from the viewpoint of device characteristics.

Silicon dioxide growth in an oxygen plasma is investigated using newly developed microwave discharge equipment with electron cyclotron resonance. It is found that the plasma oxidation kinetics can be explained by the Cabrera‐Mott model, in which the drift motion of ions is assumed, rather than by the Deal‐Grove thermal oxidation model. The drift motion of oxygen ions across the oxide film under the influence of self‐bias in the plasma is considered to be the plasma oxidation mechanism. Infrared absorption and etch‐rate measurements reveal that the physical properties of plasma oxidized SiO2 at 600°C are structurally quite comparable to those of thermally oxidized SiO2 .

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