Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applications

Yamaguchi, Masafumi; Warabisako, T.; Sugiura, Hiroaki

doi:10.1016/0022-0248(94)90379-4

Cited by 35 publications

(17 citation statements)

References 8 publications

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“…For space applications, high-efficiency cells also have significant payload advantages. (Yamaguchi et al, 1994).…”

Section: Cost Analysismentioning

confidence: 95%

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Super-High-Efficiency Iii–v Tandem and Multijunction Cells

Yamaguchi¹

2014

Series on Photoconversion of Solar Energy

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“…For space applications, high-efficiency cells also have significant payload advantages. (Yamaguchi et al, 1994).…”

Section: Cost Analysismentioning

confidence: 95%

“…The allowable cost per unit area of solar cell modules depends strongly on module efficiency (Bowler and Wolf, 1980;Yamaguchi et al, 1994). For example, a 30%-efficient cell costing 3.5 times as much as a 15%-efficient cell of the same area will yield equivalent overall photovoltaic (PV) system costs (Bowler and Wolf, 1980).…”

Section: Cost Analysismentioning

confidence: 99%

Super-High-Efficiency Iii–v Tandem and Multijunction Cells

Yamaguchi¹

2014

Series on Photoconversion of Solar Energy

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“…With MBE technique, no carbon contamination is observed, but the crystal quality is deteriorated by the damage of N 2 plasma as a nitrogen source. To resolve such problems, a new technique substituted for a conventional method in growth of InGaAsN is required, so we have proposed a chemical beam epitaxy (CBE) technique 4) , in which thin films are grown in low pressure and temperature, and the N compound sources are used. CBE is the only technique that incorporates both the beam nature of MBE yet uses all vapor sources.…”

Section: Chemical Beam Epitaxy (Cbe) Growth Of (In)gaasnmentioning

confidence: 99%

Analysis of defects and impurities in new (In)GaAsN materials for concentrator multi-junction solar cells

Yamaguchi

Ohshita

Kojima

et al. 2009

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

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Target of the Japanese Innovative Photovoltaics R&D Program started from fiscal year 2008 is to develop high efficiency solar cells with conversion efficiency of more than 40% and low electricity cost of less than 7 JPY/kWh until 2050. In this program, concentrator III-V compound multi-junction (MJ) tandem solar cells have great potential for high efficiencies of over 50% and low cost of less than 30JPY/W. InGaAsN material is good candidate for 4-6 junction solar cells. In our preliminary stage of our project, 2% and 11.3% efficiencies have been obtained with GaAsN p-n and InGaAsN p-i-n single-junction solar cells. In order to increase efficiency of single and 4-junction solar cells, it is very important to understand and reduce defects and impurities in the grown films. In this paper, characterization of the CBE (Chemical Beam Epitaxy)-grown GaAsN films by Hall effect and DLTS (Deep Level Transient Spectroscopy) measurements is presented.

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“…III-V compound semiconductors such as GaAs have a potential of realizing high-energy conversion efficiencies in excess of 45%, if optimally used in multi-junction (MJ) tandem configuration [1]. In order to introduce high efficiency III-V compound solar cells on a large production scale, cost reduction by employing thin film structures fabricated on inexpensive substrates such as Si is a prerequisite [2]. Thin film MJ tandem solar cells fabricated on Si substrates in particular have many potential advantages other than low-cost such as high-efficiency, lightweight and large-area production capability.…”

Section: Introductionmentioning

confidence: 99%