The electrical properties of the fluorinated silicon nitride films deposited from reactive plasma of SiF4-N2-H2 or SiF2-N2-H2 gas mixtures were investigated by changing the source SiF4 flow rate. A resistivity and breakdown strength as high as 1014–1016 Ω cm and 5–10 MV/cm, respectively, were reproducibly observed over a wide range of the N/Si ratio. The deep-trap densities and energy levels are not very dependent on the film composition. Their slight variation in the present deposition conditions can be understood by the slight variation of the spin density and the optical gap. The dielectric constant and the interface state density between silicon and silicon nitride are 4.8–6.0 and (1–5)×1012 cm−2 eV−1, respectively.
Fluorinated silicon nitride films are deposited by the plasma-reaction of SiF4–N2–H2 gas mixture. The fluorine content in the film is ∼25 at%. Although hydrogen is incorporated in the form of N–H bonds, the bondings remain stable up to 640°C. The films have relatively high resistivity (7×1016 Ωcm at 2 MV/cm), high breakdown strength (10 MV/cm), and low deep trap density.
A 1.5 μm GaInAsP/InP buried-heterostructure laser diode was fabricated by reactive ion etching using a mixture of ethane and hydrogen for the formation of mesa stripe. Blocking layers were regrown on the dry etched wafers by liquid phase epitaxy. Continuous-wave operation was obtained at room temperature. A threshold current as low as 15 mA was achieved, which is superior to that of the same structure laser diode fabricated by conventional chemical etching.
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