1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

Matsui, T.; Ohtsuka, K.; Sugimoto, Hiroshi; Abe, Yuji; Ohishi, T.

doi:10.1063/1.103151

Cited by 34 publications

(6 citation statements)

References 13 publications

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“…[37,38]) or for buried heterostructure devices (e.g. [39][40][41][42][43]). In general, rectangular profiles are fabricated via reactive ion etching (RIE) which introduces the issue of crystallographic damage of the material in proximity to the etched surface [44,45].…”

Section: Overgrowth Of Rectangular-patterned Surfacesmentioning

confidence: 99%

Overgrowth of submicron-patterned surfaces for buried index contrast devices

Koontz

Petrich

Kolodziejski

et al. 2000

Semicond. Sci. Technol.

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In a wide variety of optoelectronic and photonic devices, a modulation of the refractive index is required. To increase device design flexibility, the index modulation may reside within the various layers of the device, and hence fabrication of the device will require subsequent overgrowth of the corrugation. The overgrowth of submicron-patterned surfaces (or gratings) for buried index contrast devices is reviewed. The material systems considered are (In, Ga)As on GaAs patterned substrates and the InGaAsP quaternary system on InP patterned substrates, as well as the associated inverted structure. The corrugation is typically a sawtooth-patterned surface or a rectangular-patterned surface having a relatively shallow depth (of the order of 100 nm). For sawtooth-patterned surface overgrowth, mass transport-induced alteration of the grating profile promotes the overgrowth of high crystalline quality material and also reduces compositional modulation of the overlayer. In contrast, for rectangular-patterned surface overgrowth, grating preservation provides the requisite (100)-oriented crystallographic planes such that compositional modulation is minimized. Furthermore, for closely lattice-matched conditions, the materials within the rectangular-patterned grating region experience an orthorhombic strain in order to elastically accommodate the lattice mismatch.

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Section: Overgrowth Of Rectangular-patterned Surfacesmentioning

confidence: 99%

Overgrowth of submicron-patterned surfaces for buried index contrast devices

Koontz

Petrich

Kolodziejski

et al. 2000

Semicond. Sci. Technol.

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“…[1][2][3][4][5] In this process, some treatments are necessary prior to regrowth to remove the RIE-induced damage. In addition, this RIE produces smooth etched surfaces.…”

Section: Introductionmentioning

confidence: 99%

Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H2)

Yamamoto

Kishi

Matsumoto

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSelective etching and polymer deposition on InP surface in reactive ion etching with a mixture of methane and hydrogen J.The electrical properties of a ͑100͒ InP surface were studied based on the fabrication process of a buried heterostructure ͑BH͒ laser diode ͑LD͒. The current-voltage ͑I -V͒ and capacitance-voltage ͑C -V͒ characteristics were measured for Schottky barriers on the surface at each step of the process-reactive ion etching ͑RIE͒ with a mixture of methane ͑CH 4 ͒ or ethane ͑C 2 H 6 ͒ and hydrogen ͑H 2 ͒, oxygen plasma treatment, chemical etching, and annealing-under conditions which produce almost the same surface as that immediately before the BH regrowth. From the characteristics, it was found that CH 4 /H 2 and C 2 H 6 /H 2 RIEs caused the appearance of almost the same damage layers as a result of phosphorus desorption and hydrogen passivation in the near-surface region. Furthermore, it was found that only annealing can remove the hydrogen passivation. These results suggest that to obtain a high-quality regrowth interface it is essential to chemically etch the damage layers resulting from phosphorus desorption prior to BH regrowth in the fabrication process of BH-LDs.

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“…1,2 The active layers of the devices must not be affected by these processes, so damage must be characterized accurately in order to get devices with high performance. In buried laser diodes, for example, insulating films of SiO 2 are used as masks for mesa etching and selective regrowth, and dry etching is used for the fabrication of the mask pattern and for mesa formation of the semiconductor layer.…”

Section: Introductionmentioning

confidence: 99%

Electrical evaluation of process-damaged layers using p-n junctions

Yuda¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Current-voltage characteristics of process-damaged p-n junction diodes are investigated for the purpose of damage evaluation. In this technique, damage is assessed by examining its effect on the diode characteristics of the peripheral portion of Zn-diffused p-n junctions. The depth information for the current-voltage measurements is obtained by wet etching. This technique is applied to determine the extent of damage caused by Ar bombardment during Ar-ion beam etching and film deposition of sputtered SiO 2 . The forward-bias current-voltage characteristics are found to be more effective for damage-depth evaluation than the reverse-bias ones. The depth of the damaged layer is determined from the behavior of the ideality factor (n) of the forward-bias current-voltage characteristics. This technique was used to probe a damaged layer to a depth of up to 350 nm in Ar-ion beam etching, which is much deeper than the 60 nm that is typically evaluated by the current-voltage characteristics of Schottky diodes. This thickness is equivalent to that evaluated by the photoluminescence intensity and cathodoluminescence properties of multiquantum well structures. In addition, the damage depth profile can be represented quantitatively by considering the nӍ2 recombination current deduced from the diameter dependence of the diode current-voltage characteristics. Three damaged regions with different recombination current densities are revealed in both Ar-ion beam etching and film deposition of sputtered SiO 2 .

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1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

Cited by 34 publications

References 13 publications

Overgrowth of submicron-patterned surfaces for buried index contrast devices

Overgrowth of submicron-patterned surfaces for buried index contrast devices

Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H2)

Electrical evaluation of process-damaged layers using p-n junctions

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