Electrical properties of silicon nitride films plasma-deposited from SiF4, N2, and H2 source gases

Abstract

The electrical properties of the fluorinated silicon nitride films deposited from reactive plasma of SiF4-N2-H2 or SiF2-N2-H2 gas mixtures were investigated by changing the source SiF4 flow rate. A resistivity and breakdown strength as high as 1014–1016 Ω cm and 5–10 MV/cm, respectively, were reproducibly observed over a wide range of the N/Si ratio. The deep-trap densities and energy levels are not very dependent on the film composition. Their slight variation in the present deposition conditions can be understood by the slight variation of the spin density and the optical gap. The dielectric constant and the interface state density between silicon and silicon nitride are 4.8–6.0 and (1–5)×1012 cm−2 eV−1, respectively.

Optoelectronic properties of fluorine-doped silicon nitride thin films

“…For example, SiN x :F film deposition from SiF 4 /N 2 plasma contain no hydrogen and the resulting film contains very high fluorine content while deposition rate of this gas mixture is rather low [1,2]. Deposition rate can be improved by adding SiH 4 or H 2 to the reactant.…”

“…Low hydrogen content SiN x :H films have been deposited from fluorinated ammonia (NF 3 ) or silicon halides (SiF 4 , SiF 2 ) mixtures [1][2][3][4][5]. For example, SiN x :F film deposition from SiF 4 /N 2 plasma contain no hydrogen and the resulting film contains very high fluorine content while deposition rate of this gas mixture is rather low [1,2].…”

“…(1)and(2). With the SiF 4 flow rate of (a) 0.5 sccm, (b) 5 sccm, and (c) SiN x :H films with the NH 4 /SiH 4 ratio of R = 6.…”

High-Speed Stark Wavelength Tuning of MidIR Interband Cascade Lasers

“…The main contribution to is provided by two bonding pads and the substrate separated by 0.3 m of silicon nitride. Taking 5 for silicon nitride [7], we obtain pF for two m bonding pads. This reduces the device modulation bandwidth to 1.2 GHz, which is close to the frequency at which the wavelength tuning collapses.…”

Silicon nitride films for the protective functional coating: Blood compatibility and biomechanical property study

“…Fluorinated silicon nitride films have been deposited from fluorinated ammonia (NF 3 ) or silicon halides (SiF 4 , SiF 2 ) mixtures in order to avoid the incorporation of hydrogen (Fainer et al, 1997), those films were demonstrated to have some advantages, such as the complete elimination of Si-H bonds from the films and an improvement in their chemical and electrical stability (Jun et al, 1999;Fujita et al, 1985).…”