Optoelectronic properties of fluorine-doped silicon nitride thin films

Park, Young-Bae; Rhee, Shi‐Woo

doi:10.1016/j.jnoncrysol.2004.07.053

Cited by 7 publications

(5 citation statements)

References 17 publications

(19 reference statements)

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“…All these data indicate that the originally F-free surface is covered by similar amount of F after HF(aq) etching, independent of HF concentration, even though different amounts of Si 3 N 4 are removed by etching. The F 1s peak is centered at 688.3 ± 0.1 eV (688.2 ± 0.2 eV for 10% HF), which is consistent with the presence of a Si-F bond [32,33]. Since LEIS is much more surface sensitive than XPS, these results confirm that Si-F is at the surface.…”

Section: Characterization Of Hf-etched Sisupporting

confidence: 69%

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si₃N₄and SiO₂

Liu

Michalak

Chopra

et al. 2016

J. Phys.: Condens. Matter

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The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).

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Section: Characterization Of Hf-etched Sisupporting

confidence: 69%

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si₃N₄and SiO₂

Liu

Michalak

Chopra

et al. 2016

J. Phys.: Condens. Matter

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“…For the F 1s region, Figure 3c, the ionic CÀF bonding peak was barely seen before BOE treatment, indicating a concentration of such F-bonded species under 0.2 atom %. After BOE treatment, peaks at 686.7 and 689.3 eV were observed, Figure 3f, and were assigned to SiÀF bonding 26 and semi-ionic fluorine, 27 respectively, according to HF (aq As described in the previous reports on O 2 /water mediated surface charge transfer to explain the p-doping of SWCNT and diamaond, 14,28 water supplies solvated O 2 to the graphene electrode, which sets the conditions for the redox reaction. 6 Water in equilibrium with air has pH ≈ 6 from the CO 2 in the air.…”

Section: Resultsmentioning

confidence: 79%

“…For the F 1s region, Figure c, the ionic C–F bonding peak was barely seen before BOE treatment, indicating a concentration of such F-bonded species under 0.2 atom %. After BOE treatment, peaks at 686.7 and 689.3 eV were observed, Figure f, and were assigned to Si–F bonding and semi-ionic fluorine, respectively, according to HF (aq) + H 2 O (l) ↔ F − + H 3 O + . We suggest that H 3 O + is related to the 534.2 eV O 1s peak, Figure e.…”

Section: Resultsmentioning

confidence: 99%

A Facile Route To Recover Intrinsic Graphene over Large Scale

Shin

Lee²,

Yu³

et al. 2012

ACS Nano

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The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H(2)O/O(2) redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H(2)O/O(2) redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H(2)O/O(2) redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

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“…The covalent bonds of SiF 2 (687.4 eV) and SiF (685.6 eV) were detected in the XPS F1s investigation, as shown in Figure 2e–g. [ 54,55 ] The SiF 2 bond was observed under all conditions in which F ions and mechanical forces coexisted. The intensity of the SiF 2 bond was higher as the concentration of TBAF increased.…”

Section: Resultsmentioning

confidence: 99%

Selective Nanoscale Fabrication with Roughness Reduction of Polycrystalline Silicon by Physically Induced Fluorine Bonds Using Atomic Force Microscope

et al. 2023

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Polycrystalline silicon (poly‐Si) is widely used as a gate layer in integrated circuits, transistors, and channels through nanofabrication. Nanoremoval and roughness control are required for nanomanufacturing of various electronic devices. Herein, a nanoscale removal method is developed to overcome the limitations of microcracks, complex procedures, and time‐consuming conventional fabrication and lithography methods. The method is implemented with a mechanically induced poly‐Si phase transition using atomic force microscope (AFM). Mechanical force induces the covalent bonds between silicon and fluorine atoms which cause the phase transition of poly‐Si. Then, the bond structure of the Si molecules is weakened and selectively removed by nano‐Newton‐scale force using AFM. A selective nanoscale removal with roughness control is implemented in 0.5 mM TBAF solution after mechanical force (43.58–58.21 nN) is applied. By the magnitude of nano‐Newton force, the removal depth of poly‐Si is controlled from 2.66 to 21.52 nm. Finally, the nanoscale fabrication on poly‐Si wafer is achieved. The proposed nanoremoval mechanism is a simple fabrication method that provides selective, nanoscale, and highly efficient removal with roughness control.

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Optoelectronic properties of fluorine-doped silicon nitride thin films

Cited by 7 publications

References 17 publications

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si₃N₄and SiO₂

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si₃N₄and SiO₂

A Facile Route To Recover Intrinsic Graphene over Large Scale

Selective Nanoscale Fabrication with Roughness Reduction of Polycrystalline Silicon by Physically Induced Fluorine Bonds Using Atomic Force Microscope

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Optoelectronic properties of fluorine-doped silicon nitride thin films

Cited by 7 publications

References 17 publications

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4and SiO2

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4and SiO2

A Facile Route To Recover Intrinsic Graphene over Large Scale

Selective Nanoscale Fabrication with Roughness Reduction of Polycrystalline Silicon by Physically Induced Fluorine Bonds Using Atomic Force Microscope

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Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si₃N₄and SiO₂

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si₃N₄and SiO₂