The bifunctionality of chromism-integrated sensors and devices has been highlighted because of their reversibility, fast response, and visual indication. For example, one of the representative chromism electrochromic materials exhibits optical modulation under ion insertion/extraction by applying a potential. This operation mechanism can be integrated with various sensors (pressure, strain, biomolecules, gas, etc.) and devices (energy conversion/storage systems) as visual indicators for user-friendly operation. In this review, recent advances in the field of chromism-integrated systems for visual indicators are categorized for various chromism-integrated sensors and devices. This review can provide insights for researchers working on chromism, sensors, or devices. The integrated chromic devices are evaluated in terms of coloration-bleach operation, cycling stability, and coloration efficiency. In addition, the existing challenges and prospects for chromism-integrated sensors and devices are summarized for further research.
Polycrystalline silicon (poly‐Si) is widely used as a gate layer in integrated circuits, transistors, and channels through nanofabrication. Nanoremoval and roughness control are required for nanomanufacturing of various electronic devices. Herein, a nanoscale removal method is developed to overcome the limitations of microcracks, complex procedures, and time‐consuming conventional fabrication and lithography methods. The method is implemented with a mechanically induced poly‐Si phase transition using atomic force microscope (AFM). Mechanical force induces the covalent bonds between silicon and fluorine atoms which cause the phase transition of poly‐Si. Then, the bond structure of the Si molecules is weakened and selectively removed by nano‐Newton‐scale force using AFM. A selective nanoscale removal with roughness control is implemented in 0.5 mM TBAF solution after mechanical force (43.58–58.21 nN) is applied. By the magnitude of nano‐Newton force, the removal depth of poly‐Si is controlled from 2.66 to 21.52 nm. Finally, the nanoscale fabrication on poly‐Si wafer is achieved. The proposed nanoremoval mechanism is a simple fabrication method that provides selective, nanoscale, and highly efficient removal with roughness control.
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