The temperature dependences of the intensity and spectral characteristics of the steady‐state photoluminescence in vitreous and monocrystalline As2Se3 are studied over the range 4 to 150 °K. The interpretation of the experimental data is based on the idea about the existence of a band of deep levels in the gap of both the glass and the crystal which are responsible for the radiation. It is concluded that the disorder leads to the disappearance of the centres which are capable of taking part in the nonradiative recombination at low temperatures.
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