On the Recombination Radiation of Vitreous Semiconductors

Photoluminescence, photostructural transformations and photoinduced anisotropy in rare-earth-doped chalcogenide glassy films

“…Considerable luminescence fatigue is shown to be characteristic for fabricated films. The absence of restoration of fatigued luminescence after interruption of excitation allows us to explain the observed fatigue phenomenon differently from the mechanism of fatigue of low-temperature luminescence in bulk chalcogenide glasses, where initial values of luminescence intensity can be reestablished later, especially quickly with an increase of temperature [14,15]. It is probable that the observed luminescence fatigue is due to its excitation in the spectral range of light absorption in the chalcogenide glass and that direct excitation of RE atoms will result in the absence or essential decrease of the luminescence fatigue.…”

Thermopower investigation of a-As/sub 2/Se/sub 3/

“…For the present case of a-As2Se3, "t" paths are considered as the most appropriate one [Kolomiets, Mamontova & Negreskul, 1968;Kolomiets, Mamontova & Babaev, 1970;Fuks & Meyer, 1974;Mains, 19741. By applying rate analysis to "t" paths, the photocurrents for both mono-molecular and bi-molecular regimes are obtained as below :- …”

Photoluminescence of Amorphous 2As2Te3·Fischer1, Heim2, Stern3 et al. 1971Phys. Rev. Lett.

“…In spite of that, photoluminescence has been found from bulk samples of amorphous As 2 Se 3 -As 2 Te 3 , As 2 Se 3 , and As 2 S 3 . 8,9 These luminescence spectra had maxima well below the forbidden gap and were attributed 8,9 to transitions to impurity-like levels within the quasiforbidden gap.…”