Study of the mechanism of radiative recombination in vitreous and monocrystalline arsenic selenide

Kolomiets, B. T.; Mamontova, T. N.; Smorgonskaya, É. A.; Babaev, A. A.

doi:10.1002/pssa.2210110206

Cited by 30 publications

(4 citation statements)

References 5 publications

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“…The broad peak at 2.7 eV contributes to the blue light emission. The above features in the PL spectra are true for all temperatures from 20 to 292 K. Similar temperature-insensitive peak position and linewidth were observed in the PL spectra of chalcogenide glasses [5]. The luminescence intensity, however, strongly depends on temperature as shown in Fig.…”

Section: 100 95supporting

confidence: 66%

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Blue Light Emission from Silicon Ultrafine Particles

et al. 1994

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The oxygen-containing silicon (Si) ultrafine particles have been deposited onto Si and Si0 2 substrates by evaporation of Si powder in an oxygen-containing argon atmosphere. The asdeposited Si ultrafine particles exposed to the ultraviolet light emit blue light, which is strong enough to be seen with the naked eye. The blue light emission is associated with a broad photoluminescence (PL) peak at 2.7 eV, which is attributed to radiative recombination via a radiative recombination center. The proposed model with one radiative and two nonradiative recombination centers well explains the temperature-dependent PL peak intensity.

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Section: 100 95supporting

confidence: 66%

“…(2) to the model in Fig. 6, the transition rates from the radiative to the nonradiative recombination centers via tunneling, P4 and P 5 , are given by P 4 = p4.exp(T/T 4 3 ) (5) and…”

Section: 100 95mentioning

confidence: 99%

Blue Light Emission from Silicon Ultrafine Particles

et al. 1994

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“…In the first place, these are reversible photostructural conversions leading to changes in many properties of CGS. It was shown in classical works [3,4] that photoluminescence spectra of As 2 Se 3 , As 2 S 3 , GeSe 2 single crystals, and appropriate CGS exhibit a single photoluminescence band (PL) with hν ≤ E q /2 (E q . is the width of the forbidden band), quantum efficiency of η = 0.2 -0.5, and large Stokes shift, W S ≥ 1 eV.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Mechanical Deformation on the Optical Properties of Laminated As2S3, GeSe2 and As2Se3 Crystals

Бабаев

Kamilov

Sultanov

et al. 2006

SSP

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Reversible photostructural conversions (darkening and bleaching) attended by a shift of transmittance edge and by the photoluminescence fatigue effect are revealed. Upon mechanical treatment of crystals the maximum of the luminescence excitation spectrum shifts toward higher energies. The low-energy edge of the luminescence spectrum flattens, and emission intensity increases. The experimental results are interpreted within a configuration model of two stable structural states of molecular groups.

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“…Then (a possible) energy dependence of the localization radius y = y ( E ) converts into a non-exponential frequency dependence.l) l) The reason for this behaviour is obvious: I n the uncorrelated case all possible relative distances R,,(20) are realized with equal probability. Then the major contribution to the double sum (9) (or multiple integral (18)) is due to pairs of initial and final states where exp (--yR,,) = 1, i.e.…”

mentioning

confidence: 99%

On the theory of absorption and luminescence spectra in amorphous semiconductors

Sprenger

1979

Physica Status Solidi (b)

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Optical transitions in a system of randomly distributed localized electron states coupled to the phorion system are considered. A general expression for the spect'ral dependence of the absorption coefficient and the luminescence intensity is derived. This expression is applied to the uncorrelated case where the spectral dependences are determined by a density-of-states model. Various types of optical transitions within a density-of-states model are considered and the corresponding spectral dependences discussed. The derived spectral representation allows t'he direct calculation of the temperature dependent moments for the various bands.Es werden optische ubergange in einem System zufallig verteilter lokalisierter Elektronenzustande, die an das Phononensystem angekoppelt sind, betrachtet. Fur die Frequenzabhangigkeiten des Absorptionskoeffizienten und der Luniineszenzintensitat wird ein allgerneiner Ausdruck abgeleitet. Dieser Ausdruck wird fur den nichtkorrelierten Fall ausgewertet, bei dem die Frequenzabhlngigkeiten durch ein Zustandsdichtemodell bestimmt sind. Verschiedene Arten optischer Ubergange werden in einem Zustandsdichtemodell betrachtet und die entsprechenden Frequenzabhangigkeiten diskutiert. Die abgeleitete Spektraldarstellung ermoglicht die direkte Berechnung der tempcraturabhangigen Momente fur die verschiedenen Bander.

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Study of the mechanism of radiative recombination in vitreous and monocrystalline arsenic selenide

Cited by 30 publications

References 5 publications

Blue Light Emission from Silicon Ultrafine Particles

Blue Light Emission from Silicon Ultrafine Particles

The Influence of Mechanical Deformation on the Optical Properties of Laminated As<sub>2</sub>S<sub>3</sub>, GeSe<sub>2</sub> and As<sub>2</sub>Se<sub>3</sub> Crystals

On the theory of absorption and luminescence spectra in amorphous semiconductors

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