On the nature of recombination centers in vitreous arsenic selenide

Detailed photoluminescence intensity and lineshape studies of doped a-As2Se3 films

“…This zeroth-order observation agrees with recent results , Alasti et al 1979 for variously prepared materials but contrasts with the earlier work of Kolomiets et al (1972). We attribute this discrepancy to sample dependent effects.…”

“…However, Pfister and co-workers (Pfister, Liang, Morgan, Taylor, Friebele andBishop 1978, Pfister, Morgan andLiang 1979, Pfister and Morgan 1980) have shown that < 1 at.% In, Ga, T1, Ni, Cu, Na, Mn, Fe, Zn in a-As,Se, GOevaporated films alters the trap-limited transient hole mobility by up to two orders of magnitude. I n addition, substantial effects of I n and Ge doping on P L in bulk a-As,Se, were reported by Kolomiets et al (1972), but have not been reproduced in other more recent experiments using variously prepared samples (Bishop et al 1979, Alasti, Higashi and ; likewise photoinduced E.S.R. in chalcogenide glasses appears insensitive to moderate doping .…”

“…Photoluminescence (PL) studies of chalcogenide glasses have revealed the presence of strongly electron-lattice coupled P L centres and associated rapid non-radiative decay a t elevated temperatures (Fischer, Heim, Stern and Weiser 1971, Kolomiets, Mamontova and Babaev 1972, Street, Searle and Austin 1974a, b, Street 1976, Kastner and Hudgens 1978, Bishop, Strom, Friebele and Taylor 1979. This result has heavily influenced current models (Mott, Davis andStreet 1975, Kastner, Adler andFritzsche 1976) describing intrinsic defects in amorphous chalcogenides.…”

Photoluminescence and Electrical Conductivity of As2S3〈Au〉 and As2S5〈Au〉 Glasses

“…The observation of photoluminescence (PL) in SCGs and their crystalline analogs [8] has stimulated the study of the effect of various impurities on their PL properties. It has been found that doping typically produces no additional emission bands in broad ranges of temperatures and photon energies.…”