Decay kinetics of photoluminescence in vitreous and crystalline arsenic selenide and arsenic sulfide

Abstract

Decay kinetics of photoluminescence of vitreous and crystalline As2Se3 and As2S3 was investigated at 4.2 °K. The relaxation curves obtained indicate the monomolecular character of radiative recombination in these materials regardless of presence or absence of long range order. Experimental data are interpreted with the use of the model of recombination transitions via a band of deep local levels in the gap of the semiconductors.