An integrated simulator for chemical vapor deposition is introduced. In addition to a reactor scale and feature scale simulators, it consists of a \mesoscopic" scale simulator with the typical length scale of a die. It is shown that the \three-scale" integrated simulator used is a proper extension of \two-scale" deposition simulators that consist of reactor scale and feature scale simulation models. Moreover, it is demonstrated that information is provided on a new length scale, for which no information is available from the \two-scale" approach, as well as important corrections to the simulation results on the reactor scale. This enables, for instance, studies of microloading. For these demonstrations, thermally induced deposition of silicon dioxide from tetraethyloxysilane (TEOS) is chosen as the application example, which is modeled by six gaseous reacting species involved in four gas-phase and eight surface reactions.
We present a systematic approach to the modeling of rapid thermal processing systems. In this approach, a discretized version of a computer-aided design file of a rapid thermal processing system is incorporated into fundamental physically based models of the transport phenomena to aid in design and optimization of these reactors. These models include a detailed radiative-heat-transfer description which is used to compute radiative exchange factors involving both diffuse and specular surfaces. The radiative exchange factors are then incorporated into transient finite element fluid-flow and heat-transfer models to investigate effects of conductive and convective heat transfer on wafer temperature uniformity. This approach is illustrated in investigations of the effects of thermal guard rings and radiative properties of the chamber on wafer temperature uniformity. Comparisons are made with experiments, and reduced-complexity models are evaluated to identify their range of applicability.
We present a two-dimensional, transient, tertiary current-distribution model for copper electrochemical deposition, with detailed surface chemistry kinetics for the model system of copper deposition with three representative additives; polyethylene glycol, bis-͑sodium sulfopropyl͒ disulfide, and hydrogen chloride. Values of kinetic parameters are extracted from statistically designed rotating-disk-electrode experiments using a transport-reaction model of the experimental system. The resulting surface chemistry description is combined with fundamental conservation laws, including transient mass transport, momentum transport, and potential distribution, to form the tertiary current distribution model. Two-dimensional finite element simulations of this model provide new insight into causes of film thickness variations across the wafer, including large potential variations originating from the initial seed-layer thickness ͑terminal effect͒, a nonuniform mass-transport boundary-layer thickness resulting from cell geometry, and fluctuations in the additive concentrations. An application of pulse plating is also explored. The surface chemistry and the tertiary current distribution models could potentially form useful tools for design and optimization of copper electrochemical deposition processes.
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