An integrated simulator for chemical vapor deposition is introduced. In addition to a reactor scale and feature scale simulators, it consists of a \mesoscopic" scale simulator with the typical length scale of a die. It is shown that the \three-scale" integrated simulator used is a proper extension of \two-scale" deposition simulators that consist of reactor scale and feature scale simulation models. Moreover, it is demonstrated that information is provided on a new length scale, for which no information is available from the \two-scale" approach, as well as important corrections to the simulation results on the reactor scale. This enables, for instance, studies of microloading. For these demonstrations, thermally induced deposition of silicon dioxide from tetraethyloxysilane (TEOS) is chosen as the application example, which is modeled by six gaseous reacting species involved in four gas-phase and eight surface reactions.
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