Multiple scale integrated modeling of deposition processes

Merchant, T.; Gobbert, Matthias K.; Cale, Timothy S.; Borucki, L.

doi:10.1016/s0040-6090(99)01055-x

Cited by 55 publications

(29 citation statements)

References 10 publications

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“…[7][8][9] Recent progress in deposition tools, as illustrated by atomic layer deposition (ALD), allowed the production of highly conformal deposits in trenches of high aspect ratios (AR: depth-to-aperture dimensions ratio). [10] Modeling of layer deposition on structured substrates, including gas-and plasma-phase chemistry and interface dynamics, has been developed over many decades [11][12][13][14][15] for standard material deposition (a:SiH, SiO x , SiN x , CF x . .…”

Section: Introductionmentioning

confidence: 99%

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Supiot¹,

Vivien²,

Blary³

et al. 2011

Chemical Vapor Deposition

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Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2 mm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45 mm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processes

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Section: Introductionmentioning

confidence: 99%

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Supiot¹,

Vivien²,

Blary³

et al. 2011

Chemical Vapor Deposition

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“…The process intensities (9) connect Equations (6) and (7) with the evolution equation (5). Using Equations (6) and (7), we obtain further the definitions of the process intensities (9)…”

Section: Phase-field Model Of the Substrate Evolutionmentioning

confidence: 99%

Phase‐field model for deposition of pyrolytic carbon

Ekhlakov

Dimitrov

Langhoff

et al. 2008

Commun. Numer. Meth. Engng.

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SUMMARYA diffuse interface model for the determination of the evolution of the deposited substrate surface during isobaric, isothermal chemical vapour infiltration (CVI) of pyrolytic carbon is proposed. A continuous scalar phase-field parameter is introduced to label explicitly the solid and the gas phases within the system. Following the conceptual line of Ginzburg-Landau theory, we formulate the initial boundary value problem of CVI. In variance with the traditional formulations, we account for the different intensities of homogeneous and heterogeneous chemical reactions during CVI by introducing a scalar-valued intensity parameter that depends only on the phase-field. The various homogeneous and heterogeneous reaction processes during CVI are described in terms of a reduced chemical reaction scheme. Finally, we discuss the application of the developed methodology for numerical simulation of a simplified two-dimensional model problem. Using a finite element method, we obtain numerical approximations for the concentration profiles along the direction of infiltration.

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“…[5] The goal of developing this new model, called the ballistic transport with local sticking factors (BTLSF) model, was to produce a simple but accurate ballistic transport-based feature-scale model where the initial deposition arrives from a source plane. State-of-the-art feature-scale models are able to simulate complex three-dimensional geometries [6][7][8][9][10] and processes such as atomic layer deposition (ALD) [11][12][13] where transients in concentration are more important. In order to achieve multiscale solutions within a reasonable time, having an efficient feature-scale model is very important.…”

Section: Introductionmentioning

confidence: 99%

Planar Source Line‐of‐Sight Model with Automatically Adjusting Time Increment and Local Sticking Factors

Jilesen

Lien

2009

Chemical Vapor Deposition

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A simple feature-scale model is developed to simulate the low pressure (LP)CVD process. The direct deposition for this model is modeled as arriving from a source plane. A line-of-sight model and cylindrical co-ordinates are used to form an analytical equation to describe the direct flux of particles arriving from the source plane. The use of a source plane allows for easier linking in multiscale simulations through the use of effective reactivity maps. A method of automatically adjusting the time increment to decrease the number of time steps required to accurately simulate the deposition process is also introduced.

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Multiple scale integrated modeling of deposition processes

Cited by 55 publications

References 10 publications

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Phase‐field model for deposition of pyrolytic carbon

Planar Source Line‐of‐Sight Model with Automatically Adjusting Time Increment and Local Sticking Factors

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