This document explains different approaches to integrating electronics in textiles. It discusses reliability standards and tests for electronics in textiles. Encapsulation technologies are evaluated concerning their applicability in textile integrated electronics. Furthermore a specific assembly with embroidered wiring and embroidered interconnections has been developed and improved. Two different encapsulation technologies have been developed for this assembly. Standardized tests have been carried out to assess the reliability of the assembly and its encapsulations. Finally the achievements are critically discussed.

This document explains different approaches to integrating electronics in textiles. It discusses reliability standards and tests for electronics in textiles. Encapsulation technologies are evaluated concerning their applicability in textile integrated electronics. Furthermore a specific assembly with embroidered wiring and embroidered interconnections has been developed and improved. Two different encapsulation technologies have been developed for this assembly. Standardized tests have been carried out to assess the reliability of the assembly and its encapsulations. Finally the achievements are critically discussed.

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Fan-out wafer-level packaging (FOWLP) is an interesting platform for Microelectromechanical systems (MEMS) sensor packaging. Employing FOWLP for MEMS sensor packaging has some unique challenges, while some originate merely from the fabrication of redistribution layers (RDL). For instance, it is crucial to protect the delicate structures and fragile membranes during RDL formation. Thus, additive manufacturing (AM) for RDL formation seems to be an auspicious approach, as those challenges are conquered by principle. In this study, by exploiting the benefits of AM, RDLs for fan-out packaging of capacitive micromachined ultrasound transducers (CMUT) were realized via drop-on-demand inkjet printing technology. The long-term reliability of the printed tracks was assessed via temperature cycling tests. The effects of multilayering and implementation of an insulating ramp on the reliability of the conductive tracks were identified. Packaging-induced stresses on CMUT dies were further investigated via laser-Doppler vibrometry (LDV) measurements and the corresponding resonance frequency shift. Conclusively, the bottlenecks of the inkjet-printed RDLs for FOWLP were discussed in detail.

Silicon interposers with through silicon vias (TSVs) have become important key components of 3D architectures. They are used as intermediate carrier and wiring device for IC components like logics, memories and sensors. Due to custom specific front and back side wiring interposers enable to adapt the fine pitch IO terminals of the mounted ICs to the IO geometries of the package level. High density copper filled TSVs with high aspect ratio as well as high density multi layer wiring using electro plated copper as conductive material and low loss dielectrics enable high performance signal transmission at interposer level without serious losses by parasitic effects. This paper presents the fabrication steps for wafer level processing of silicon interposers with copper filled TSVs as well as their wafer level assembly with IC components. Special focus is drawn on the TSV formation process including via etching, isolation and filling as well as front side high density wiring and subsequent backside processing of the thin TSV wafers. In this context, also temporary wafer to wafer bonding which is required for backside processing of thin TSV wafers is discussed. The final interposers which carry one or more IC components have lateral dimensions up to several square centimeters and thicknesses between 50-100 m. They include up to several thousands of TSVs per device with a single electrical resistance between 4.9-5.7 mOhms. All processes were run using production equipment at 200 mm wafers

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The constant drive to further miniaturization and heterogeneous system integration leads to a need for new packaging technologies which also allow large area processing with potential for low cost applications. Wafer level embedding technologies and embedding of active components into printed circuit boards CChip-in-Polymer) are two major packaging trends in this area. This paper describes the use of compression and transfer molding techniques for multi chip embedding in combination with large area and low cost redistribution technology from printed circuit board manufacturing as adapted for Chip-in-Polymer applications. The work presented is part of the German governmental funded project SmartSense. Embedding by transfer molding is a well known process for component embedding that is widely used for high reliable microelectronics encapsulation. However, due to material flow restrictions transfer molding does not allow large area encapsulation, but offers a cost effecti ve technology for embedding on a medium size scale as known e.g. from MAP Cmolded array packaging) molding Ctypically with sizes up to 60×60 mm2). In contrast, compression molding is a relatively new technology that has been especially developed for large area embedding of single chips but also of multiple chips or heterogeneous systems on wafer scale, typically up to 8" or even up to 12". Wiring of these embedded components is done using PCB manufacturing technologies, i.e. a resin coated copper CRCC) film is laminated over the embedded components - no matter which shape the embedded components areas are: a compression molded wafer, larger rectangular areas or smaller transfer molded systems CMAP). Typical process flow for RCC redistribution is lamination of RCC, via drilling to die pads by laser, galvanic Cu via filling, conductor line and pad formation by Cu etching, soldermask and solderable surface finish application - all of them standard PCB processes. The feasibility of the technology is de