High-temperature reliability of Flip Chip assemblies

Braun, T.; Becker, Karl‐Friedrich; Koch, M.; Bader, V.; Aschenbrenner, R.; Reichl, H.

doi:10.1016/j.microrel.2005.06.004

Cited by 48 publications

(14 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…A low underfill CTE (20-40 ppm/°C) value is required for flip-chip assembly [5,10,11]. Low CTEs can decrease the stress that occurs among the substrate, IC chip, and solder interconnection.…”

Section: Coefficient Of Thermal Expansion (Cte)mentioning

confidence: 99%

Fabrication and characterization of nano filler-filled epoxy composites for underfill application

Firdaus

Mariatti

2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The present research aims to fabricate and characterize different nano filler types and filler loadings in epoxy composites for underfill application. The nano filler types were synthetic diamond (SD), boron nitride (BN), and silica (S). The filler loadings which were considered in the study were varied from 1 to 4 vol%. Sonication process was used to facilitate filler dispersion. The results showed that BN had a good flow ability, with higher flow rates than the other filler types. The thermal conductivity of the composites increased with the addition of fillers, and higher thermal conductivity value is observed in SD system. The coefficient of thermal expansion (CTE) of composites decreased with the addition of filler with lower CTE value shown by BN system. Generally, SD showed higher flexural strength and flexural modulus compared with BN and S. A high filler loading also resulted in decreased flexural strength but increased flexural modulus.

show abstract

Section: Coefficient Of Thermal Expansion (Cte)mentioning

confidence: 99%

Fabrication and characterization of nano filler-filled epoxy composites for underfill application

Firdaus

Mariatti

2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…The measurement technique is based on a two-term-calibration method (Figure 7 a). Two very temperature stable reference resistors (TCR < 0.2 ppm·K-1) have been chosen close to top and bottom of the expected measurement range [8]. With each measurement cycle these two references and up to six piezo resistors can be measured.…”

Section: Fabricationmentioning

confidence: 99%

A New Test Device for Characterization of Mechanical Stress Caused by Packaging Processes

Hirsch

Doerner

Hauptmann

et al. 2006

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Abstract. This paper reports on a new method for estimation and minimization of mechanical stress on MEMS sensor and actuator structures due to packaging processes based on flip chip technology. For studying mechanical stress a test chip with silicon membranes was fabricated. A network of piezo-resistive solid state resistors created by diffusion was used to measure the surface tension pattern between adjacent membranes. Finite element method simulation was used to calculate the stress profile and to determine the optimum positions for placing the resistive network.Keywords: Thermo mechanical stress, Micro electromechanical systems (MEMS), Packaging. IntroductionMicrosystems technology spreads out rapidly over many other engineering fields, such as chemical and biological process engineering. This constantly draws a need for new, adapted packaging processes according to their application [1]. Otherwise, these customized solutions are generating enormous rising costs, which are defrayed only with difficulty. In order to fulfill the requirements on high quality and reliability negative effects caused by packaging should be analyzed and characterized early during the design phase. Currently, these are reduced afterwards by external circuiting and signal processing, but are not entirely compensated [2]. In this contribution a new method is presented for the estimation and minimization of mechanical stresses caused by packaging processes. Thermo mechanical loads often affect the operability of micro system components. We will concentrate on thermo mechanical aspects of packaging of MEMS starting from the investigations of mechanical deformation by packaging processes. Requirements on related material laws and material data for model based simulation are pointed out. Afterwards, the test chip (Figure 1) is introduced for predicting the influence of packaging processes on the accuracy of a micromechanical pressure sensor with the help of finite element analysis (FEA). With pressure sensors packaging of MEMS over a wide temperature range causes impairments on the long-term and drift behavior. Finally, a procedure for the test chip fabrication is proposed that focuses on the membrane with sensor elements in particular, as well as on related electrical structures.

show abstract

“…It is difficult to compare testing results obtained by using different displacement rates. 1 Furthermore, by using ball shear testing, only the attachment strength of a single interface can be obtained, which hardly provides clear information about the failure mechanism of solder interconnects.…”

Section: Introductionmentioning

confidence: 99%

Solder Volume Effects on the Microstructure Evolution and Shear Fracture Behavior of Ball Grid Array Structure Sn-3.0Ag-0.5Cu Solder Interconnects

Xia

Zhou

et al. 2011

Journal of Elec Materi

View full text Add to dashboard Cite

The standoff height of ball grid array (BGA) structure solder joints has a significant influence on the formation and growth of interfacial intermetallic compounds (IMC). The results show that the thickness of the IMC layer at the solder/Cu interface of BGA structure Cu/Sn-3.0Ag-0.5Cu/Cu joints increases with decreasing standoff height after reflowing. The growth behavior of the total IMC layer is controlled by a diffusion process with the growth rate increasing with standoff height. Both the standoff height and isothermal aging time greatly influence the shear behavior of joints, the shear strength of which shows a parabolic trend with increasing standoff height, while the nominal shear strain decreases monotonically with increasing standoff height. The fracture location of BGA structure joints changed from the middle of the solder matrix to near the interface when the standoff height was increased. After undergoing isothermal aging at 125°C, the fracture mechanism of solder joints changed from ductile fracture to the mixed mode of brittle and ductile fracture with increasing standoff height.

show abstract

High-temperature reliability of Flip Chip assemblies

Cited by 48 publications

References 3 publications

Fabrication and characterization of nano filler-filled epoxy composites for underfill application

Fabrication and characterization of nano filler-filled epoxy composites for underfill application

A New Test Device for Characterization of Mechanical Stress Caused by Packaging Processes

Solder Volume Effects on the Microstructure Evolution and Shear Fracture Behavior of Ball Grid Array Structure Sn-3.0Ag-0.5Cu Solder Interconnects

Contact Info

Product

Resources

About