A comparative study of the electromechanical properties was carried out on a low-temperature-processed amorphous indium–gallium–zinc-oxide thin-film transistor, particularly with regard to the structural design of the device under the stress accumulation of an outward bending surface. Shown herein is the reliable electromechanical integrity of island-structured devices against the mechanical strain at bending radii of mm order. The onset of crack strain also closely corresponded to the electrical failure of the stressed device. These results revealed that the island configuration on the bending surface effectively suppresses the stress accumulation on sheets composed of inorganic stacked layers in a uniaxial direction.

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The electromechanical response of an amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistor (TFT) fabricated on a polyimide substrate was investigated as a function of the neutral axis location and strain history of the bending system. Here, we demonstrate the pronounced bending characteristics of a-IGZO TFTs and their backplane under extreme mechanical strain when they are embedded in a neutral plane (NP). After being subjected to tensile stress, the devices positioned near the NP were observed to function well against a cyclic bending stress of 2 mm radius with 100,000 times, while TFTs farther from the neutral surface exhibited modified electrical properties.

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We have developed a 3.5‐inch flexible display driven by solution‐processed organic thin‐film transistors manufactured using all‐sputtered electrodes. For large area and mass production of OTFTs, low‐cost and low‐resistance copper electrode is adopted for S/D and Gate electrodes. There is no significant degradation after delamination of plastic substrate from the glass and bending stress.

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We studied the space charge limited current effect in hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TPTs). We demonstrate that the drain current is space charge limited when the source-drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap of a-Si:H in a-Si:H TFT.