We studied the space charge limited current effect in hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TPTs). We demonstrate that the drain current is space charge limited when the source-drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap of a-Si:H in a-Si:H TFT.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.