This work reports on a comparative study comprising three transition metal oxides, MoO 3 , WO 3 and V 2 O 5 , acting as front p-type emitters for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions (>5 eV) and wide energy band gaps, these oxides act as transparent hole-selective contacts with semiconductive properties that are determined by oxygen-vacancy defects (MoO 3-x ), as confirmed by x-ray photoelectron spectroscopy. In the fabricated hybrid structures, 15 nm thick transition metal oxide layers were deposited by vacuum thermal evaporation. Of all three devices, the V 2 O 5 /n-silicon heterojunction performed the best with a conversion efficiency of 15.7% and an open-circuit voltage of 606 mV, followed by MoO 3 (13.6%) and WO 3 (12.5%). These results bring into view a new silicon heterojunction solar cell concept with advantages such as the absence of toxic dopant gases and a simplified low-temperature fabrication process.

During the last decade, transition metal oxides have been actively investigated as hole-and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3) with high work functions (>5 eV) were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~10 9 Ω/sq), although lower values (~10 4 Ω/sq) were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich) layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV) and conversion efficiency (12.7%), followed by MoO3 (581 mV, 12.6%) and WO3 (570 mV, 11.8%). A short-circuit current gain of ~0.5 mA/cm 2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

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The synthesis of single‐crystalline β‐CsPbI3 perovskite nanorods (NRs) using a colloidal process is reported, exhibiting their improved photostability under 45–55% humidity. The crystal structure of CsPbI3 NRs films is investigated using Rietveld refined X‐ray diffraction (XRD) patterns to determine crystallographic parameters and the phase transformation from orthorhombic (γ‐CsPbI3) to tetragonal (β‐CsPbI3) on annealing at 150 °C. Atomic resolution transmission electron microscopy images are utilized to determine the probable atomic distribution of Cs, Pb, and I atoms in a single β‐phase CsPbI3 NR, in agreement with the XRD structure and selected area electron diffraction pattern, indicating the growth of single crystalline β‐CsPbI3 NR. The calculation of the electronic band structure of tetragonal β‐CsPbI3 using density functional theory (DFT) reveals a direct transition with a lower band gap and a higher absorption coefficient in the solar spectrum, as compared to its γ‐phase. An air‐stable (45–55% humidity) inverted perovskite solar cell, employing β‐CsPbI3 NRs without any encapsulation, yields an efficiency of 7.3% with 78% enhancement over the γ‐phase, showing its potential for future low cost photovoltaic devices.

Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current–voltage (I–V) and capacitance–voltage (C–V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ϕ) for the Schottky device were obtained from I–V characteristics as 2.04 and 0.83 eV at 300 K and 6.95 and 0.39 eV at 150 K respectively. It was observed that in presence of inhomogeneity at metal–semiconductor interface, the ideality factor increases and barrier height decreases with the decrease of temperature. The Richardson constant value was estimated as 137 A–cm−2–K−2 from modified Richardson plot, which is closer to the known theoretical value of n-Si where mean value of barrier height (ϕb0¯), and its standard deviation (σ0) were estimated using double Gaussian distribution (DGD) analysis. Different device parameters, namely, built-in potential, carrier concentration, image force lowering and depletion width were also obtained from the C–V–T measurements. First time use of V2O5 thin-film as an interfacial layer (IL) on Au/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission (TE) theory. The interesting result obtained in this present work is the V2O5 thin-film reduced its conducting capability with decreasing temperature, while it shows a totally insulating behaviour below 150 K.

The water based highly conductive transparent poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) polymer is a promising material for many optoelectronic device applications.

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Synthesis of monodispersed, stable halide, and mixed halide perovskite nanocrystals by hot‐injection approach is still challenging due to the fast reaction kinetics and unrevealed ligand chemistry. The atomic scale imaging of perovskite nanocrystals using transmission electron microscopy (TEM) is also challenging because of their structural degradation due to high electron dose and soft nature of perovskites. Here, a novel technique is proposed to synthesize pure cubic phase, monodispersed, stable CsPbX3 (X = I/Br) nanocrystals by simply modifying ligand chemistry using olive oil, which also leads to realization of tuneable composition mixed halide perovskites by simple physical mixing. Here, the atomic scale images and the probable distribution of Cs, Pb, and I/Br atoms in single halide and mixed halide perovskites via high‐resolution TEM microscopy are presented. The estimated atomic distance (PbPb and PbI/Br) is strongly corroborated with the VESTA structure. Interestingly, the lattice constant (d‐value) of the synthesized nanocrystals is smaller (≈3%) than the theoretical predicted one, leading to a higher phase stability in laboratory ambient conditions (45–55% humidity, 300 K). The theoretical analysis using density functional theory enlightens the understanding of higher stability of CsPbI2Br along with the maximum optical absorption in the visible regime, as a preferable material for the photovoltaic applications.