Template-free, bottom-up synthesized, micron sized few layer 2H-MoS2for photodetector and photocatalytic applications.

Sonication induced vertical fragmentation of two-dimensional (2D) WS nanosheets into highly luminescent, monodispered, zero-dimensional (0D) quantum dots (QDs) is reported. The formation of 0D structures from 2D sheets and their surface/microstructure characterization are revealed from their microscopic and spectroscopic investigations. Size dependent optical properties of WS nanostructures have been explored by UV-vis absorption and photoluminescence spectroscopy. Interestingly, it is observed that, below a critical dimension (∼2 nm), comparable to the Bohr exciton radius, the tiny nanocrystals exhibit strong emission. Finally, the electroluminescence characteristics are demonstrated for the first time, by forming a heterojunction of stabilizer free WS QDs and ZnO thin films. The signature of white light emission in the light emitting device is attributed to the adequate intermixing of emission characteristics of WS QDs and ZnO. The observation of white electroluminescence may pave the way to fabricate prototype futuristic efficient light emitting devices.

We report for the first time, the fabrication of novel two-dimensional (2D) p-WS2/n-Si vertical heterostructures with superior junction and photoresponse characteristics. Few layer WS2 has been synthesized by a lithium-ion intercalation technique in hexane and coated on Si substrates for realization of CMOS compatible devices. Atomic force microscopy and Raman spectroscopy have been used to confirm the 2D nature of WS2 layers. Sharp band-edge absorption and emission peaks have indicated the formation of mono-to-few-layers thick direct band gap WS2 films. The electrical and optical responses of the heterostructures have exhibited superior properties revealing the formation of an abrupt heterojunction. The fabricated photodetector device depicts a peak responsivity of 1.11 A W(-1) at -2 V with a broadband spectral response of 400-1100 nm and a moderate photo-to-dark current ratio of ∼10(3). The optical switching characteristics have been studied as a function of applied bias and illuminated power density. A comparative study of the reported results on 2D transition metal chalcogenides indicates the superior characteristics of WS2/n-Si heterostructures for future photonic devices.

Lithium halide assisted high yield synthesis of few layers of 2H phase semiconducting WS2 in organic solvents is reported. A group of lithium halides (LiCl, LiBr and LiI) has been employed for the first time to intercalate WS2 by using Li, followed by mild sonication to exfoliate in dispersive polar solvents. In contrast to the n-butyllithium (n-BuLi) assisted exfoliation method, which yields only the metallic 1T phase on prolonged reaction (3-7 days) at higher temperatures, the proposed exfoliation method produces only semiconducting 2H WS2 in a much shorter time (5 minute sonication). A very high yield of 19 mg ml(-1) has been obtained using LiI as an exfoliating agent due to its lower lattice energy compared to other alkali halides and the smaller size of the cation. Detailed microscopy and spectroscopic characterization reveals exfoliation of few layered WS2 with stoichiometric composition. Absorption and emission characteristics of the 2D WS2 layer exhibit a characteristic band edge and quantum confined transitions. As a proof-of-concept, we have successfully demonstrated photodetector devices comprising solution proccessed p-WS2/n-Si heterojunctions, which behave as diodes with a high rectification ratio (>10(2)) exhibiting a broad band photoresponse over the entire visible region.

In recent times e-textiles have emerged as wonder safeguards due to the great potential background in space, military, healthcare, or portable electronics. As a result, widespread research and development have been done to make significant advancement in this field, but it still remains a key challenge to use one single product with multifunctional attributes with the past performance of key characteristics. In this work, phase-separated PEDOT:PSS ornamented with reduced graphene oxide (rGO) nanosheets, deposited on the newly fabricated ultralightweight, superhydrophobic, and mechanically enriched merino wool/nylon (W−N) composite textile followed by the dipping and drying strategy. The open edges-layered structure of rGO helping uniform deposition of PEDOTs clusters, which allows the formation of a stacked layer of PEDOTs/rGO-PEDOTs/PEDOTs for robust three-dimensional electrical transforming channel network within the W−N textile surface. These dip-coated multifunctional textiles show high electrical conductivities up to 90.5 S cm −1 conjugated with a flexible electromagnetic interference shielding efficiency of 73.8 dB (in X-band) and in-plane thermal conductivity of 0.81 W/mK with a minimum thickness of 0.84 mm. This thin coating maintained the hydrophobicity (water contact angle of ∼150°) leading to an excellent EM protective cloth combined with real-life antenna performance under high mechanical or chemical tolerance. Interestingly, this multiuse textile can also act as an exceptional TASER Proof Textile (TPT) due to a short out of the electrical shock coming from the TASER by its unique conducting network architecture. Remarkably, this coated textile can get a response by the soft touch to lighten up the household bulb and could establish wireless communication via an HC-05 Bluetooth module as a textile-based touch switch. This developed fabric could perform as a new potentially scalable single product in intelligent smart garments, portable nextgeneration electronics, and the growing threat of EM pollution.