Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/<i>n</i>-Si Schottky diode

Mahato, Somnath; Biswas, Debaleen; Gerling, Luís G.; Voz, C.; Puigdollers, J.

doi:10.1063/1.4993553

Cited by 66 publications

(25 citation statements)

References 39 publications

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“…Similarly as the temperatures increases, carriers get sufficient energy to overcome the higher barrier. Therefore the barrier height increases with increasing temperature (Mahato et al, 2017).…”

Section: Resultsmentioning

confidence: 95%

Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization

Sharma¹,

Rajamani²,

Шенгуров³

et al. 2019

PINSA

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The ion implantation is well-established techniques for device fabrication in III-V semiconductors. GaAs is grown on Silicon (Si) substrate using Germanium (Ge) as a buffer layer to reduce the lattice mismatch. The implantation of nitrogen ions in GaAs layers of the epitaxial-grown structure GaAs/Ge/Si is done with sequential implantation of doses from 0.8 x 10 17 to 2.0 x 10 17 cm -2 with respective energies ranging from 40 keV to 120 keV per atomic ion. This was aimed to achieve more uniform depth distribution of nitrogen as a result of multiple ion implantation. A subsequent high temperature annealing is done for nanostructures formation and to improve the crystal quality. For the annealing process, rapid thermal annealing (RTA) and furnace annealing (FA) are used in temperature range of 700°C-850°C under argon and nitrogen environment. Current-voltage (I-V) characterization are carried out to study the effect of the post-annealing process on the barrier height and ideality factor. The electrical parameters are observed to have a strong dependence on temperature. The inhomogeneity in barrier height gives rise to the temperature dependence of barrier height.

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Section: Resultsmentioning

confidence: 95%

Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization

Sharma¹,

Rajamani²,

Шенгуров³

et al. 2019

PINSA

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“…It was grown by plasma enhanced chemical vapor deposition, using n-type epitaxial silicon wafer as a substrate. This material gives an excellent result in the performance of high-temperature leakage current [119]. This gives a high breakdown voltage and is capable of handle much higher temperatures without thermal runaway for the examined device.…”

Section: Future Directionsmentioning

confidence: 99%

“…Studies have shown the use of graphene and a graphene oxide-doped NiO nanocomposite as an interfacial layer in Schottky diodes [117,118]. Little attention has been given to transition metal oxides (TMOs), and there are few reports of TMO-based MOS Schottky diodes [119], with no significant reports found on TMO/polymer hybrid composite based Schottky diodes. To fully exploit the potential of these materials, there is a need for further research and investigations.…”

Section: Future Directionsmentioning

confidence: 99%

“…Nanostructured graphene material is one of the suitable candidates for an appropriate metal barrier that might help improve the limit of junction temperature as it has metallic behavior with outstanding electronic and thermal properties [119]. A graphene nanowall as a Schottky barrier material was used on a trench MOS barrier Schottky diode.…”

Section: Future Directionsmentioning

confidence: 99%

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Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…If an electric field is applied at the contacts, the barrier height φ B will lower to φ B0 − Δφ B where φ B0 is the initial barrier height and Δφ B is the barrier change induced by the electric field. More information can be found …”

Section: Contact Resistance In a Small Channel Area Ofetsmentioning

confidence: 99%

The Motivation for and Challenges to Scaling Down Organic Field‐Effect Transistors

Chan

2019

Adv Elect Materials

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v) operating frequency, [13][14][15] vi) contact resistance, [16][17][18][19] vii) crystallinity and grain boundaries of the organic thin films, [20][21][22] viii) active matrix OFET array or integrated circuit, [23][24][25][26][27][28] ix) novel deposition techniques, [29][30][31][32][33] x) unconventional substrates for OFETs, [34][35][36][37] xi) physical or biological sensors, [38][39][40][41][42][43][44] etc. The progress in all these different aspects has framed the development roadmap of the OFETs. Among all the challenges in the OFET development, some of them are more intricate than the others which deserve the research community to spend more efforts. In this review, I try to discuss the development bottlenecks or limitations in the current OFET research, especially on downsizing. I will also explore some possible direction that can lead to solutions. In the OFET development, the channel carrier mobility (μ) is always considered as the critical parameter to evaluate the overall performance of the devices. The improvement of the dielectric insulators, device structures, or crystallinity of the organic thin films is usually quantified or reflected by the improvements of the mobility values. In some commonly used organic semiconductors, such as pentacene, the variations in the reported mobility values can be up to a few orders of magnitude. Different factors such as the purification level of the semiconductors, fabrication parameters, or processing environments are believed to influence the quality of the OFET active layers and thus the channel carrier mobility. [45][46][47][48][49] Other than these physical components, the way of evaluating the carrier mobility in OFET is equally essential. Erroneous mobility would blur the physics of the device and more importantly, lead to an incorrect conclusion. In general, the carrier mobility in the linear or saturation regime is extracted from the slope of the I D versus V G or I D 1/2 versus V G plot, respectively. The region of the transfer curves used to evaluate the carrier mobility would affect the values significantly. If a kink or change of slope is present in the transfer curves due to the contact resistances, nonequilibrium biasing of shortchannel, minority carrier injection, or other device issues, overestimation of the carrier mobility would result and it has been discussed in the recent work by Gundlach and co-workers, [50] Choi et al., [51] and Okachi. [52] Although the carrier mobility is a significant performance indicator, it should not be considered as the only parameter to access the performances of the OFETs. One major barrier that limits the development of OFET is that the research community too concentrates on the carrier mobility andThe development of organic field-effect transistors (OFETs) in the past few decades has emphasized the carrier mobility of the active layer. It is true that carrier mobility is an important parameter to quantify transistor performance; however, it should not be considered as the only parameter necessary to evaluate ...

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Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode

Cited by 66 publications

References 39 publications

Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization

Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

The Motivation for and Challenges to Scaling Down Organic Field‐Effect Transistors

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