Indium nitride (InN) thin films were deposited on kapton polyimide substrate by using reactive gas-timing radio frequency (RF) sputtering technique. An indium target with purity of 99.999% was used. Throughout this work, the RF power and gas ratio of argon and nitrogen were maintained at 60 W and 40:60 (Ar:N2), respectively. The substrate temperature was varied from room temperature to 300°C. The surface morphology, structural and electrical properties of the deposited thin films as a function of the substrate temperature were investigated. All the deposited InN thin films have wurtzite crystal structure with preferred orientation along the (101) direction. The InN (101) peak becomes stronger and sharper as the substrate temperature increases from 100°C to 300°C. In addition, the packing density of the grains increases as the substrate temperature increases. The deposited InN films exhibit n-type conductivity behavior and its Hall mobility increases from 720 cm2/V-s to 2670 cm2/V-s as the substrate temperature increases from room temperature to 300 °C. These results imply that nucleation and crystal growth as well as the crystalline quality were improved at higher substrate temperatures. All the results lead to conclude that the optimal substrate temperature for the deposition of InN was 300 °C.
The study signifies the radio-frequency (RF) sputtering growth and characterizations of indium nitride (InN) thin films deposited on flexible substrates. A three-inch diameter indium (In) sputtering target with purity of 99.999% was used. The deposition was carried out at room temperature and with substrate temperature of 200 °C. The surface morphologies, structural and optical properties of the deposited thin films were examined by using field-emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction as well as Fourier transform infrared spectroscopy. All the results revealed that InN thin films have been successfully deposited on the flexible substrates in the gas mixture ambient of argon and nitrogen.
In this report, indium nitride (InN) thin films were deposited on kapton polyimide flexible substrate by reactive radio frequency (RF) sputtering method using an indium target in a mixture of Ar and N2gases. The effects of the Ar:N2gas ratio on the properties of the deposited InN thin films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and energy dispersive (EDX) spectroscopy. The XRD revealed that the deposited films composed of polycrystalline wurtzite InN. The FESEM and AFM surface morphologies showed smooth and uniform surface of gas ratio at 60:40 compare to others gas ratio. Overall, the characteristics of the InN thin films were effectively improved with combination the N2:Ar gas ration at 60:40. The results showed that the gas ratio plays an important role in improving the properties of the InN thin films.
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