Reactive Sputtering Growth of Indium Nitride Thin Films on Flexible Substrate Under Different Substrate Temperatures

Abstract

Indium nitride (InN) thin films were deposited on kapton polyimide substrate by using reactive gas-timing radio frequency (RF) sputtering technique. An indium target with purity of 99.999% was used. Throughout this work, the RF power and gas ratio of argon and nitrogen were maintained at 60 W and 40:60 (Ar:N2), respectively. The substrate temperature was varied from room temperature to 300°C. The surface morphology, structural and electrical properties of the deposited thin films as a function of the substrate temperature were investigated. All the deposited InN thin films have wurtzite crystal structure with preferred orientation along the (101) direction. The InN (101) peak becomes stronger and sharper as the substrate temperature increases from 100°C to 300°C. In addition, the packing density of the grains increases as the substrate temperature increases. The deposited InN films exhibit n-type conductivity behavior and its Hall mobility increases from 720 cm2/V-s to 2670 cm2/V-s as the substrate temperature increases from room temperature to 300 °C. These results imply that nucleation and crystal growth as well as the crystalline quality were improved at higher substrate temperatures. All the results lead to conclude that the optimal substrate temperature for the deposition of InN was 300 °C.

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device

“…The recorded XRD pattern of the fabricated MoS 2 /Ag/Kapton structure reveals an intense reflection, with Miller indices (002) corresponding to the hexagonal phase of the MoS 2 film (JCPDS ICDD no. 00-002-1133) along with the diffraction peaks at 2θ ∼ 21.62° and 25.91° of the Kapton substrate. , The formation of the NCQDs-MoS 2 hybrid structure is confirmed by the XRD pattern of NCQDs-MoS 2 /Ag/Kapton, which consists of a (002) reflection of hexagonal MoS 2 along with a diffraction hump centered at 23.23°, corresponding to the (002) reflection plane of NCQDs. , The remaining diffraction peaks, as symbolized in both XRD patterns, correspond to the diffraction planes of the Ag BE. The confirmation of NCQDs-MoS 2 hybrid-structure formation was also analyzed by Raman spectroscopy.…”

Next Generation Non-Invasive Biomarker Testing in Saliva: The Organic Electrolyte Gated Field Effect Transistor Aptasensor System

“…The appearance of characteristic spikes in the intensity at specific angles can be attributed to different crystal orientations that are so distinctive they can be used to distinguish material contents of films. Literature examples of XRD analysis of TIPS-pentacene demonstrate three characteristic peaks, around 5.3⁰, 10.7⁰ and 16.05⁰ [449]. These correspond to different crystal orientations, nominated 001, 002 and 003.…”