Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

Abstract

The study signifies the radio-frequency (RF) sputtering growth and characterizations of indium nitride (InN) thin films deposited on flexible substrates. A three-inch diameter indium (In) sputtering target with purity of 99.999% was used. The deposition was carried out at room temperature and with substrate temperature of 200 °C. The surface morphologies, structural and optical properties of the deposited thin films were examined by using field-emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction as well as Fourier transform infrared spectroscopy. All the results revealed that InN thin films have been successfully deposited on the flexible substrates in the gas mixture ambient of argon and nitrogen.