Abstract:In this report, indium nitride (InN) thin films were deposited on kapton polyimide flexible substrate by reactive radio frequency (RF) sputtering method using an indium target in a mixture of Ar and N2gases. The effects of the Ar:N2gas ratio on the properties of the deposited InN thin films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and energy dispersive (EDX) spectroscopy. The XRD revealed that the deposited films composed … Show more
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