François Cheviré, et al.. Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films. Solid State Sciences, Elsevier, 2016Elsevier, , 54, pp.22-29. 10.1016Elsevier, /j.solidstatesciences.2015 M A N U S C R I P T
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Graphical AbstractEvolution of the permittivity κ and loss tangent tanδ (@1kHz) • The permittivity of the epitaxial oxide film is 42 @1KHz• The permittivity of the oriented oxynitride film is 60 @1KHz
Pulsed plasmas are very powerful tools to investigate mechanisms. This paper is focused on H atom kinetics in low-pressure high-density inductively coupled pulsed plasmas. We explore pure H 2 , H 2 /N 2 , CH 4 /H 2 and CH 4 /N 2 mixtures. These gas mixtures offer two very different kinds of wall conditions, which are stainless-steel and hydrocarbon-coated walls. It shows that H loss probability (β) is sensitive to wall conditions. Efforts are made to understand β evolutions with the different parameters. The effect of pressure in non-depositing plasmas is also investigated. Evolution of H atom surface loss probability is linked to ion flux measurements. Ion bombardment promotes H surface loss.
International audienceIn the search for new dielec. and ferroelec. compds., we were interested in the perovskite (Sr1-xLax)2(Ta1-xTix)2O7 solid soln. with ferroelec. end members Sr2Ta2O7 (TCurie=-107 °C) and La2Ti2O7 (TCurie=1461 °C). In order to achieve a Curie temp. close to room temp., the formulation with x=0.01 was chosen and synthesized as thin films by reactive radio-frequency magnetron sputtering. In oxygen rich plasma, a (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 film is deposited, characterized by a band-gap Eg=4.75 eV and an (1 1 0) epitaxial growth on (0 0 1)MgO substrate. The use of nitrogen rich plasma allows to synthesize (Sr0.99La0.01)(Ta0.99Ti0.01)O2N oxynitride films, with band gap Eg∼2.10 eV and a polycryst., textured or epitaxial growth on (0 0 1)MgO substrate. Nitrogen-substoichiometric oxynitride films with larger lattice cells are produced for low dinitrogen percentages in the sputtering plasma
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