Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

Abstract

François Cheviré, et al.. Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films. Solid State Sciences, Elsevier, 2016Elsevier, , 54, pp.22-29. 10.1016Elsevier, /j.solidstatesciences.2015 M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Graphical AbstractEvolution of the permittivity κ and loss tangent tanδ (@1kHz) • The permittivity of the epitaxial oxide film is 42 @1KHz• The permittivity of the oriented oxynitride film is 60 @1KHz

LaTiOxNy Thin Film Model Systems for Photocatalytic Water Splitting: Physicochemical Evolution of the Solid–Liquid Interface and the Role of the Crystallographic Orientation

“…The sputtering targets can be either the oxynitride, the related oxide, or (for ternary oxynitrides) a single element target . Among the oxynitride thin film materials grown by reactive magnetron sputtering are LaTiO x N y , TiO x N y , Ti(Cr)O 2 :N, TaO x N y, Zn x O y N z , SiO x N y , (Sr 0.99 La 0.01 )(Ta 0.99 Ti 0.01 )O 2 N, V x ON, and Cr x ON . The obtained compositions band‐gap energies and crystalline properties of the films can be adjusted by tuning the sputtering parameters, such as the substrate temperature and the N 2 content of the reactive gas mixture .…”

“…The obtained compositions band‐gap energies and crystalline properties of the films can be adjusted by tuning the sputtering parameters, such as the substrate temperature and the N 2 content of the reactive gas mixture . Relatively low substrate temperatures were used for the deposition of ternary oxynitride films, for example, TiO x N y (250–400 °C), TaO x N y (room temperature–100 °C), Zn x O y N z (150 °C), and SiO x N y (350 °C), while higher temperatures were needed for quaternary and more complex oxynitride films, for example, LaTiO x N y (800–900 °C), and (Sr 0.99 La 0.01 )(Ta 0.99 Ti 0.01 )O 2 N (750 °C) . Polycrystalline, oriented, and epitaxial films with different N contents and bandgap energies have been reported …”

“…In a typical deposition process, reactive gas mixtures, such as O2-N2, [15] Ar-N2, [16] Ar-N2-O2 [17] as well as Ar-N2O [18] are used. The sputtering targets can be either the oxynitride, [19] the related oxide [20] or (for ternary oxynitrides) a single element target. [18,21] Among the oxynitride thin film materials grown by reactive magnetron sputtering are LaTiOxNy, [19,22] TiOxNy, [17,23] Ti(Cr)O2:N, [24] TaOxNy, [15,21] ZnxOyNz, [16] SiOxNy, [18] (Sr0.99La0.01)(Ta0.99Ti0.01)O2N, [20] VxON and CrxON.…”

“…[15,19] Relatively low substrate temperatures were used for the deposition of ternary oxynitride films, for example, TiOxNy (250-400 o C), [17, 23a] TaOxNy (room temperature-100 o C), [15,21] ZnxOyNz (150 o C), [16] and SiOxNy, (350 o C), [18] while higher temperatures were needed for quaternary and more complex oxynitride films, for example, LaTiOxNy (800-900 o C), [19,22] and (Sr0.99La0.01)(Ta0.99Ti0.01)O2N (750 o C). [20] Polycrystalline, oriented, and epitaxial films with different N contents and bandgap energies have been reported. [16][17][18][19][20][21] PLD is an effective method to prepare high quality oxynitride thin films.…”

Ferroelectric and dielectric study of strontium tantalum based perovskite oxynitride films deposited by reactive rf magnetron sputtering

“…According to the results of Nanamatsu [16], it is expected that the (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7) oxide is ferroelectric with a Curie temperature close to room temperature. We have shown that in reactive Ar + O2 + N2 plasmas, oxide films are obtained for plasmas containing dioxygen and dinitrogen whereas oxynitride (Sr0.99La0.01)(Ta0.99Ti0.01)O2N (SLTTON) films are produced only in Ar + N2 plasmas, that is without O2 [18].…”