The size of the band gap and the energy position of the band edges make several oxynitride semiconductors promising candidates for efficient hydrogen and oxygen production under solar light illumination. Intense research efforts dedicated to oxynitride materials have unveiled the majority of their most important properties. However, two crucial aspects have received much less attention: One is the critical issue of compositional/structural surface modifications that occur during operation and how these affect photoelectrochemical performance. The second concerns the relation between electrochemical response and the crystallographic surface orientation of the oxynitride semiconductor. These are indeed topics of fundamental importance, since it is exactly at the surface where the visible-light-driven electrochemical reaction takes place. In contrast to conventional powder samples, thin films represent the best model system for these investigations. This study reviews current state-of-theart oxynitride thin film fabrication and characterization, before focusing on LaTiO 2 N, selected as a representative photocatalyst. An investigation of the initial physicochemical evolution of the surface is reported. Then, it is shown that after stabilization the absorbed photon-to-current conversion efficiency of epitaxial thin films can differ by about 50% for different crystallographic surface orientations, and be up to 5 times larger than for polycrystalline samples.

Developing novel materials for the conversion of solar to chemical energy is becoming an increasingly important endeavour. Perovskite compounds based on bandgap tunable oxynitrides represent an exciting class of novel photoactive materials. To date, literature mostly focuses on the characterization of oxynitride powder samples which have undeniable technological interest but do not allow the investigation of fundamental properties such as the role of the crystalline quality and/or the surface crystallographic orientation toward photo-catalytic activity. The challenge of growing high quality oxynitride thin films arises from the availability of a suitable substrate, owing to strict material and processing requirements: effective lattice matching,

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