Hybrid perovskite materials have been one of the brightest spotlights in the radiation detection research fields due to their higher carrier mobility and lower trap state density in recent years. In this paper, the CsPbBr3 microcrystal thick film is successfully prepared using a low‐cost facile solution synthesis method. The properties of samples are characterized by field‐emission scanning electron microscope (FE‐SEM), X‐ray diffraction (XRD), and UV‐vis diffuse reflectance spectrum (UV‐vis DRS). In addition, X‐ray detectors based on the CsPbBr3 microcrystal thick film are fabricated and the photoelectric properties of the detectors are further improved through the multiple‐times dissolution–recrystallization method. An improved sensitivity of 470 µC Gyair−1 cm−2 is obtained for X‐ray photodetector based on recrystallized CsPbBr3 microcrystal thick film at zero bias under a remarkably low dose rate (0.053 µGyair s−1). This sensitivity is over 20 times higher than that of α‐Se X‐ray detectors working at a much higher field of 10 V µm−1. The current investigation can provide an efficient low‐cost and facile method to fabricate self‐powered X‐ray detectors based on CsPbBr3 microcrystal thick film that work normally at low radiation dose rate.

A promising photodetector based on CH 3 NH 3 PbI 3 single crystal under visible light and X-ray irradiation is reported. The CH 3 NH 3 PbI 3 crystal grown by inverse temperature crystallization acts as the absorber material directly converting visible light and the impinging X-ray photons to electron hole pairs, respectively. The underlying photoelectric response mechanism behind the observation under visible light and X-ray irradiation is carefully discussed. Remarkably, the perovskite detectors demonstrate a good air-exposure stability for more than 2 months with encapsulation. The results demonstrate that the CH 3 NH 3 PbI 3 single crystal has a great potential for application in the visible light and X-ray detection.

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The physical Schottky parameters of devices based on Schottky contact are important to analyze the working mechanism. This article theoretically studies the parameter characteristics of the current-voltage curve of two back-to-back connected Schottky contacts via the thermionic emission model, and it is found that not all the parameters are able to be extracted under some constraints. Compared with some classical extraction methods, a straightforward strategy to approach the Schottky intrinsic parameters by solving equations during the characteristic interval are presented. In addition, this method is verified on several representative standard curves and experimental curves, and the extracted parameters are highly compatible with those curves. The current extraction method will be of great significance for the design and preparation of Schottky-based devices.

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