We present the status of the Virgo analysis pipeline dedicated to the search for coalescing binary signals, focusing on methods based on prior knowledge of the signal waveform. The pipeline includes two partially independent search methods: the multi-band template analysis (MBTA), which is original of Virgo and exploits the chirping behaviour of the signal, and a distributed implementation of the classical matched filter procedure (Merlino), based on robust MPI code. We discuss the application of the search methods to the analysis of data acquired during the Virgo commissioning run C5, which allowed us to perform tests and partially validate the methods and code.
The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400° C to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600° C activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 µm.
Crystallization induced by proton beam irradiation using large area ion implantation at low temperature (less than 600°C) have been investigated. Phosphine gas containing hydrogen of more than 95% is discharged by RF power of 100W. Both phosphorus ions and protons are accelerated by a potential of 100kV and implanted into polycrystalline silicon (poly-Si) layers. At a range of beyond 2×1015 ions/cm2 P1 ions dose, amorphous phase is primarily formed and then changes into polycrystals again and its grain sizes grow up to 50nm in average diameter. The crystallization is found to occur simultaneously with phosphorus doping and to depend on the amount of the irradiated protons. This technique enables us to eliminate the activation annealing process for implanted dopant.
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