A mechanism of compositional deviation of Ba-Y-Cu-O films during sputtering has been investigated, and a process for obtaining as-deposited superconducting films from a stoichiometric target has been developed. The main factor of the deviation is the radiation of high-energy electrons emitted from the oxide target with a low work function onto the growing surface. By eliminating the electron bombardment, films with the same composition were obtained reproducibly. As-grown films 4000 Å thick deposited at 580°C showed T
c ( ρ=0) of 82.5 K and an excellent surface smoothness.
The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400° C to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600° C activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 µm.
We present an alternative procedure for solving the eigenvalue problem of replicated transfer matrices describing disordered spin systems with (random) 1D nearest neighbour bonds and/or random fields, possibly in combination with (random) long range bonds. Our method is based on transforming the original eigenvalue problem for a 2 n × 2 n matrix (where n → 0) into an eigenvalue problem for integral operators. We first develop our formalism for the Ising chain with random bonds and fields, where we recover known results. We then apply our methods to models of spins which interact simultaneously via a onedimensional ring and via more complex long-range connectivity structures, e.g., (1 + ∞)-dimensional neural networks and 'small-world' magnets. Numerical simulations confirm our predictions satisfactorily.
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