The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400° C to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600° C activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 µm.
The performance of scanning driver circuits fabricated with low temperature self-aligned Al gate polysilicon TFTs is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400"C to enable the use of alu minum gate electrodes. The lo w temp erature crys tallization phenomeno n, which oc curs when protons are implanted simultaneou sly with boron or phosphorus dopants, is employed to eliminate the 600oC activation annealing process. A maximum clock frequency of about 2.OMH z is achieved when the driver operating voltage is 24V and the TFT channel length is t21tm.
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