The authors demonstrated that N , NЈ-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide ͑PTCDI-C13͒ thin-film transistors ͑TFTs͒ exhibited high field-effect electron mobility of 2.1 cm 2 / V s by just annealing at an adequate temperature ͑140°C͒ after the TFT fabrications. While PTCDI-C13 formed c-axis oriented thin films, the thermal treatments improved crystallinity of the thin films as revealed by x-ray diffraction. The thermal treatment also affected thin-film morphologies; the morphologies changed from oval ball-like grains to flat and large tilelike grains, which had molecular height steps and whose size reached several micrometers.
We demonstrated that bottom contact (BC) configuration organic thin-film transistors (OTFTs) easily get higher performance by using conductive metal oxide (CMO) as source and drain electrodes. Although BC-OTFTs are more advantageous than top contact (TC) configuration in the viewpoint of device fabrications, it is also well-known that BC-OTFTs show poor performance compared with TC-OTFTs with the same active material. We found out that using CMO like indium tin oxide as contact electrodes enhanced performance of BC-OTFTs without any special surface treatments. This manner was truly effective for most organic semiconducting materials, for example, pentacene, polythiophene, and so on.
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