Low‐voltage, high‐gain, and high‐mobility organic complementary inverters based on N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide and pentacene

Tatemichi, Shuhei; Ichikawa, Musubu; Kato, Shimpei; Koyama, Toshiki; Taniguchi, Yoshio

doi:10.1002/pssr.200701267

Cited by 44 publications

(30 citation statements)

References 15 publications

(17 reference statements)

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“…[ 23 ] The n-type PTCDI-C13 TFTs in our experiment exhibited degradation in the device's performance when the devices were exposed to ambient air ( Figure S4a, Supporting Information), which is consistent with the previous reports. [ 24 ] To prevent the degradation of PTCDI-C13 N-type semiconductor iCVD gate dielectric semiconductors, 25 nm-thick ALD Al 2 O 3 was employed as an inorganic layer for encapsulation, in consideration of the low gas permeability and high transparency of Al 2 O 3 . [ 14 ] However, the deposition of Al 2 O 3 via ALD directly onto the active organic channel layer caused severe degradation in V T and S.S., as well as a decrease in the overall current fl ow in the channel layer ( Figure 3 ).…”

Section: Doi: 101002/aelm201500385mentioning

confidence: 99%

A Low‐Voltage Organic Complementary Inverter with High Operation Stability and Flexibility Using an Ultrathin iCVD Polymer Dielectric and a Hybrid Encapsulation Layer

Seong

Choi

Jang

et al. 2016

Adv Elect Materials

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which results in the rapid degradation of organic devices with n-type semiconductors. Several methods have been investigated, such as introducing top-gated device structures [ 12 ] or applying an encapsulation layer on the devices, [ 13,14 ] to prevent the diffusion of water or oxygen into the semiconductors. However, most of the additional layers directly integrated onto the semiconductor usually damage the semiconductor, often causing device failure. [ 15 ] Here, we fabricated a low-voltage organic complementary inverter with a high environmental stability by adopting an ultrathin (typically having a thickness of less than 30 nm) polymer dielectric layer named poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3) via initiated chemical vapor deposition (iCVD). [ 16 ] The pV3D3 exhibited a high fl exibility and a low leakage current ( J i ) less than 10 −9 A cm −2 up to 5 MV cm −1 with an ultralow thickness down to 10 nm. [ 17,18 ] As well as the dielectric layer for electronic devices, a hybrid encapsulation layer via sequential deposition of iCVD and atomic layer deposition (ALD) was applied directly onto the organic complementary inverter to improve the environmental stability of organic electronic devices. [ 19 ] By adopting these dielectric layers and encapsulation layers together, the newly developed organic complementary inverter in this study exhibited a high gain of 130 V/V at a switching threshold voltage ( V M ) of 1.52 V at a supply voltage of 3 V. It also retained high air stability for more than 3 weeks. Also, devices on fl exible substrates were intact up to 2% of tensile strain, demonstrating its excellent mechanical fl exibility.As p-and n-type semiconductors, dinaphtho[2;3-b:2′,3′-f ]-thieno [3,2-b]thiophene (DNTT) and N , N ′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) were selected to fabricate the organic complementary inverters. Prior to the examining the electrical characteristics of the complementary inverters, the electrical characteristics of OTFT with each semiconductor were analyzed ( Figure 1 ). The sub-30 nm-thick iCVD pV3D3 layer was mainly used as a gate dielectric layer in both OTFTs. The use of such an ultrathin polymeric dielectric layer enables the operation of both n-and p-type OTFTs below ±5 V, which is critically important to reduce the power consumption. Furthermore, both p-and n-type OTFTs exhibited hysteresisfree operation with a low gate leakage current ( I G ) in the range of 10 −10 A, demonstrating the excellent performance of the OTFTs with the iCVD dielectric layer. The average µ obtained from ten devices was 0.87 ± 0.19 cm 2 V −1 s −1 for DNTT TFT and 0.71 ± 0.02 cm 2 V −1 s −1 for PTCDI-C13 TFT, respectively. The | V T | of each device was also similar to each other (−1.29 V for

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Section: Doi: 101002/aelm201500385mentioning

confidence: 99%

A Low‐Voltage Organic Complementary Inverter with High Operation Stability and Flexibility Using an Ultrathin iCVD Polymer Dielectric and a Hybrid Encapsulation Layer

Seong

Choi

Jang

et al. 2016

Adv Elect Materials

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“…Not only the electrodes but also the active layers were deposited via vacuum deposition, using the following materials. Pentacene, which is well known to have high hole mobility reaching 5.5 cm 2 /V s [10], was used as the active layer for the p-type transistors in this study, and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide with eight alkyl chains (PTCDI-C8) was used for the n-type transistors, among some possible n-type materials [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Organic complementary inverter and ring oscillator on a flexible substrate

Kim

Cho

Kwak

et al. 2011

Journal of Information Display

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A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C8 (PTCDI-C8) for p-and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p-and n-type transistors were 0.056 and 0.013 cm 2 /V s, respectively. The inverter, which was composed of p-and n-type transistors, showed a gain of 48.6 when V DD = −40 V and at the maximum noise margin of V DD /2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when V DD = −170 V.

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“…Pentacene is one of the most widely investigated organic semiconductors for OFETs because of its high intrinsic hole mobility [2]. But the operating voltages required to achieve high hole mobility (µ) from pentacene based OFETs are generally higher than 20 V. In order to address this issue, high-k gate insulators were employed in the pentacene based OFETs [3,4]. However, high-k gate insulator usually has a large surface energy [5], which results in small grain size for pentacene films.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator

Liao

Ishiwara

Ohmi

2011

IEICE Electron. Express

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Pentacene based organic field-effect transistors (OFETs) with SiO 2 and HfON gate insulators have been fabricated, and the effect of deposition temperature and deposition rate on the grain sizes of pentacene films was investigated. It was found that the grain sizes of pentacene films increase with increasing deposition temperature and decreasing deposition rate. Due to the increase in grain size, pentacene based OFET with HfON gate insulator shows enhanced electrical properties, such as a low subthreshold swing of 0.14 V/decade and a large on/off current ratio of 1.

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Low‐voltage, high‐gain, and high‐mobility organic complementary inverters based on N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide and pentacene

Cited by 44 publications

References 15 publications

A Low‐Voltage Organic Complementary Inverter with High Operation Stability and Flexibility Using an Ultrathin iCVD Polymer Dielectric and a Hybrid Encapsulation Layer

A Low‐Voltage Organic Complementary Inverter with High Operation Stability and Flexibility Using an Ultrathin iCVD Polymer Dielectric and a Hybrid Encapsulation Layer

Organic complementary inverter and ring oscillator on a flexible substrate

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator

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